Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
August
2004
ECP052
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
800 1000 MHz
+28.5 dBm P1dB
+44 dBm Output IP3
18 dB Gain @ 900 MHz
Single Positive Supply (+5V)
Available in SOIC-8 or 16pin
4mm QFN package
Applications
Final stage amplifiers for
Repeaters
Mobile Infrastructure
Product Description
The ECP052 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power. It
is housed in an industry standard SOIC-8 or 16-pin
4x4mm QFN SMT package. All devices are 100% RF
and DC tested.
The ECP052 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP052 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
ECP052D
ECP052G
Specifications
(1)
Parameter
Units Min Typ Max
Operational Bandwidth
MHz
800
1000
Test Frequency
MHz
850
Gain dB
15.5
17
Output P1dB
dBm
+27
+28
Output IP3
(2)
dBm
+42.5
+44
Test Frequency
MHz
900
Gain dB
15.5
17.8
Input
Return
Loss
dB 18
Output Return Loss
dB
7
Output P1dB
dBm
+27
+28.7
Output IP3
(2)
dBm
+42.5
+43
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
dBm +23
Noise Figure
dB
7
Operating Current Range, Icc
(3)
mA 200 250 300
Device
Voltage,
Vcc
V +5
1. Test conditions unless otherwise noted: 25C, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100
. (ie. total device current typically will be 262 mA.)
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
Operating Case Temperature
-40 to +85
C
ECP052D
Watt InGaP HBT Amplifier (16p 4mm Pkg)
Storage Temperature
-65 to +150
C
ECP052G
Watt InGaP HBT Amplifier (SOIC-8 Pkg)
RF Input Power (continuous)
+28 dBm
ECP052D-PCB900 900 MHz Evaluation Board
Device Voltage
+8 V
ECP052G-PCB900 900 MHz Evaluation Board
Device Current
400 mA
Device Power
2 W
Operation of this device above any of these parameters may cause permanent damage.
1
2
3
4
12
11
10
9
16
15
14
13
5
6
7
8
N/C
RF OUT
RF OUT
N/C
Vref
N/C
RF IN
N/C
Vb
ia
s
N/C
N/C
N/C
N/C
N/C
N/C
N/C
1
2
3
4
8
7
6
5
Vref
N/C
RF IN
N/C
Vbias
RF OUT
RF OUT
N/C
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
August
2004
ECP052
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
C, unmatched 50 ohm system)
0
0.2
0.4
0.6
0.8
1
Frequency (GHz)
Gain / Maximum Stable Gain
0
5
10
15
20
25
30
35
40
Ga
in
(
d
B
)
DB(|S[2,1]|)
DB(GMax)
0
1.0
1.
0
-1
.
0
10.
0
10.0
-1
0.
0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.
0
-3
.0
4.0
4.
0
-4
.0
0.2
0.2
-0.
2
0.4
0.
4
-0
.4
0.6
0.
6
-0
.6
0.8
0
.
8
-
0
.
8
S11
Swp Max
1GHz
Swp Min
0.05GHz
0
1.
0
1.
0
-1
.0
10
.0
10.0
-1
0.
0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.2
-0.
2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0
.
8
-
0
.
8
S22
Swp Max
1GHz
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 1000 MHz, with markers placed at 0.2 1 GHz in 0.1 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25
C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50 -2.72
24.16
133.35
-36.72
29.75
-2.23
-102.97
100 -2.25 20.33
124.95
-35.31
13.96 -3.08
-137.03
200 -2.31 17.23
119.37
-34.90 2.32 -3.32
-159.63
400 -3.08 15.63 98.28
-33.62
-16.36 -3.48
-172.70
600 -5.79 15.58 69.70
-32.10
-37.73 -2.87
-176.25
800 -19.72 15.22 25.60 -31.19 -78.95 -2.27 -179.74
1000 -6.06 11.91 -22.67 -33.26 -129.67 -1.40 173.15
1200 -2.34 6.92 -56.59 -38.16 176.95 -1.49 165.12
1400 -1.28 2.28 -78.59 -41.14 132.98 -1.96 160.84
1600 -0.91 -1.17 -96.56 -42.62 113.65 -2.53 160.80
1800 -0.71 -4.40 -112.20
-40.78 98.57 -2.92 157.57
2000 -0.60 -6.78 -128.36
-40.27 74.44 -3.29 155.77
2200 -0.58 -8.70 -146.80
-37.79 53.03 -3.72 155.24
2400 -0.55 -9.87 -169.80
-39.90 53.88 -3.96 158.19
2600 -0.51 -10.59
160.74
-37.66 41.18 -3.25 160.80
2800 -0.51 -11.66
128.82
-35.78 31.88 -1.97 158.05
3000 -0.54 -13.08 95.01 -35.88 27.61 -1.09 149.64
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026"
The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning
Shunt capacitors C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
August
2004
ECP052
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
900 MHz Application Circuit (ECP052G-PCB900)
Typical RF Performance at 25
C
S21 vs Frequency
10
12
14
16
18
20
840
860
880
900
920
940
Frequency (MHz)
S2
1
(
dB
)
+25C
+85C
-40C
S11 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
840
860
880
900
920
940
Frequency (MHz)
S1
1
(
dB
)
+25C
+85C
-40C
S22 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
840
860
880
900
920
940
Frequency (MHz)
S2
2
(
dB
)
+25C
+85C
-40C
Noise Figure vs. Frequency
0
2
4
6
8
10
840
860
880
900
920
940
Frequency (MHz)
NF
(
dB
)
+25C
+80C
-40C
P1 dB vs. Frequency
20
22
24
26
28
30
840
860
880
900
920
940
Frequency (MHz)
P1
d
B
(
dBm
)
+25C
+85C
-40C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885KHz Meas BW, 900 MHz
-80
-75
-70
-65
-60
-55
-50
-45
-40
18
19
20
21
22
23
24
Output Channel Power (dBm)
AC
P
R
(
d
B
m
)
+25C
+85C
-40C
OIP3 vs. Temperature
freq. = 900, 901 MHz, +13 dBm /tone
35
37
39
41
43
45
-40
-15
10
35
60
85
Temperature (C)
OI
P
3
(
d
B
m
)
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25C
35
37
39
41
43
45
8
10
12
14
16
18
20
Output Power (dBm)
OI
P3
(
dBm
)
OIP3 vs. Frequency
+25, +13 dBm / tone
35
37
39
41
43
45
840
860
880
900
920
940
Frequency (MHz)
OI
P3
(
d
B
m
)
Frequency
900 MHz
S21 Gain
17.5 dB
S11 Input Return Loss
-18 dB
S22 Output Return Loss
-7 dB
Output P1dB
+28.7 dBm
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+43 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+23 dBm
Noise Figure
7 dB
Device / Supply Voltage
+5 V
Quiescent Current
250 mA
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
August
2004
ECP052
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
ECP052G (SOIC-8 Package) Mechanical Information
Outline Drawing
Land Pattern
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85
C
Thermal Resistance, Rth
(1)
62
C / W
Junction Temperature, Tjc
(2)
162
C
Notes:
1. The thermal resistance is referenced from the junction-
to-case at a case temperature of 85
C. Tjc is a function
of the voltage at pins 6 and 7 and the current applied to
pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
250 mA at an 85
C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247
C.
Product Marking
The component will be marked with an
"ECP052G" designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the "Application
Notes" section.
ESD / MSL Information
ESD Rating: Class 1B
Value:
Passes between 500 and 1000V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235
C convection reflow
Standard:
JEDEC Standard J-STD-020
Functional Diagram
Function Pin
No.
Vref 1
Input
3
Output
6, 7
Vbias 8
GND Backside
Paddle
N/C or GND
2, 4, 5
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135")
diameter drill and have a final plated thru diameter of .25
mm (.010").
3. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8
All dimensions are in millimeters (inches). Angles are in
degrees.
MTTF vs. GND Tab Temperature
100
1000
10000
100000
60
70
80
90
100
110
120
Tab Temperature (C)
MTTF (million hrs)
1
2
3
4
8
7
6
5
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
August
2004
ECP052
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
ECP052D (16-pin 4x4mm Package) Mechanical Information
Outline Drawing
Land Pattern
0.65mm
TYP.
TYP.
SOLDERMASK SWELL TO BE 0.5mm
FROM OUTSIDE EDGE OF ALL PADS
GROUND PLANE AREA FOR VIAS
2.23mm X 2.23mm
RECOMMENDED PAD
0.76mm X 0.34mm
DEVICE GROUND PAD
2.0mm X 2.0mm
4.00mm
16L 4.0mm X 4.0mm PACKAGE
0.25mm DIA. THERMAL GROUND VIA HOLE VIAS ARE PLACED
ON A 0.65mm GRID. VIAS ARE TO BE CONNECTED TO TOP,
BOTTOM, AND INTERNAL GROUND PLANES IN ORDER TO
MAXIMIZE HEAT DISSIPATION. FOR .031" THK FR4 MATERIAL,
VIA BARREL PLATING TO BE MIN. 0.0014 THICK. VIAS TO BE
PLUGGED WITH EITHER CONDUCTIVE OR NON-CONDUCTIVE
EPOXY TO PREVENT SOLDER. DRAINS THROUGH VIA IN
REFLOW PROCESS
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85
C
Thermal Resistance, Rth
(1)
62
C / W
Junction Temperature, Tjc
(2)
162
C
Notes:
1. The thermal resistance is referenced from the junction-
to-case at a case temperature of 85
C. Tjc is a function
of the voltage at pins 10 and 11 and the current applied
to pins 10, 11, and 16 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
250 mA at an 85
C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247
C.
Product Marking
The component will be marked with an
"ECP052D" designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the "Application
Notes" section.
ESD / MSL Information
ESD Rating: Class 1B
Value:
Passes between 500 and 1000V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235
C convection reflow
Standard:
JEDEC Standard J-STD-020
Functional Diagram
Function Pin
No.
Vref 1
RF Input
3
RF Output
10, 11
Vbias 16
GND Backside
Paddle
N/C or GND
2, 4-9, 12-15
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance
of this device. Vias should use a .35mm (#80 / .0135")
diameter drill and have a final plated thru diameter of .25
mm (.010").
3. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8
All dimensions are in millimeters (inches). Angles are in
degrees.
1
2
3
4
12
11
10
9
16
15
14
13
5
6
7
8
N/C
RF OUT
RF OUT
N/C
Vref
N/C
RF IN
N/C
Vb
ia
s
N/C
N/C
N/C
N/C
N/C
N/C
N/C
MTTF vs. GND Tab Temperature
100
1000
10000
100000
60
70
80
90
100
110
120
Tab Temperature (C)
MTTF (million hrs)
PDF 
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