NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 100 at I
C
= 350 mA
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
= 25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=1mA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=80V, I
E
=0
Emitter Cut-Off Current I
EBO
10
A
V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.35
V
I
C
=350mA, I
B
=35mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
IC=350mA, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
100
100
300
I
C
=10mA, V
CE
=2V*
I
C
=350mA, V
CE
=2V*
Transition
Frequency
f
T
50
500
MHz
I
C
=200mA, V
CE
=5V
f=20MHz
Collector-Base
Capacitance
C
CB
20
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
2N6731
3-10
C
B
E
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