SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 FEBRUARY 1995
7
FEATURES
*
High gain and low saturation voltages
COMPLEMENTARY TYPE
BCX69
PARTMARKING DETAIL
BCX68
CE
BCX68-16 CC
BCX68-25 CD
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
25
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown voltage
V
(BR)CBO
25
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
V
I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.1
10
A
A
V
CB
=25V
V
CB
=25V, T
a
=150C
Emitter Cut-Off Current
I
EBO
10
A
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BCX68-16
BCX68-25
50
85
60
100
160
250
375
250
400
I
C
=5mA, V
CE
=10V
I
C
=500mA, V
CE
=1V
I
C
=1A, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V
Transition Frequency
f
T
100
MHz
I
C
=100mA, V
CE
=5V,
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
For typical characteristics graphs see FMMT449 datasheet.
BCX68
C
C
B
E
SOT89
3 - 36
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