N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93
FEATURES
*
60 Volt V
DS
*
R
DS(on)
=5
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
60
V
Continuous Drain Current at T
amb
=25C
I
D
270
mA
Pulsed Drain Current
I
DM
3
A
Gate-Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=100
A, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
0.8
3
V
I
D
=1mA, V
DS
=V
GS
Gate Body Leakage
I
GSS
10
nA
VGS=15V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
0.5
A
V
GS
=0V, V
DS
=25V
Static Drain-Source
on-State Resistance (1)
R
DS(on)
5
V
GS
=10V, I
D
=200mA
Forward
Transconductance (1)(2)
g
fs
200
mS
V
DS
=10V, I
D
=200mA
Input Capacitance (2)
C
iss
60
pF
V
GS
=0V, V
DS
=10V
f=1MHz
Turn-On Time (2)(3)
t
(on)
10
ns
V
DD
15V, I
D
=600mA
Turn-Off Time (2)(3)
t
(off)
10
ns
(1) Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2% (2) Sample test
(3) Switching times measured with a 50
source impedance and <5ns rise time on a pulse generator
BS170P
3-27
D
G
S
E-Line
TO92 Compatible
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