SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - MARCH 1999
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent HFE Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage E.g. 21mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
78m
at 4.5A
Partmarking Detail -
053
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
75
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
10
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1053A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
250
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CES
150
250
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
CEO
75
100
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150
250
V
I
C
=100
A, V
EB
=1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8.8
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.9
10
nA
V
CB
=120V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
1.5
10
nA
V
CES
=120V
Collector-Emitter
Saturation Voltage
V
CE(sat)
21
55
150
160
350
30
75
200
210
440
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=100mA*
I
C
=4.5A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
900
1000
mV
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
825
950
mV
I
C
=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
270
300
300
40
440
450
450
60
20
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4.5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Switching Times
t
on
162
ns
I
C
=2A, I
B1
=I
B2
=
20mA,
V
CC
=50V
t
off
900
ns
I
C
=2A, I
B1
=I
B2
=
20mA,
V
CC
=50V
Transition Frequency
f
T
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
FCX1053A
PDF 
ZIP