SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
5A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 5 Amps
*
Extremely Low Saturation Voltage E.g. 60mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
66m
at 3A
Complimentary Type -
FCX1051A
Partmarking Detail -
151
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-45
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-5
A
Continuous Collector Current
I
C
-3
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1151A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-45
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CES
-40
V
I
C
=-100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-10mA
Collector-Emitter
Breakdown Voltage
V
(BR)CEV
-40
V
I
C
=-100
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-0.3
-100
nA
V
CB
=-36V
Emitter Cut-Off Current
I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-100
nA
V
CE
=-32V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-60
-120
-140
-200
-90
-180
-220
-300
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-5mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-3A, I
B
=-250mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-985
-1050
mV
I
C
=-3A, I
B
=-250mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-850
-950
mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
180
100
450
400
300
190
45
800
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Transition Frequency
f
T
145
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
40
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
170
ns
I
C
=-2A, I
B
=-20mA,
V
CC
=-30V
t
off
460
ns
I
C
=-2A, I
B
=
20mA,
V
CC
=-30V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX1151A
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