SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
PARTMARKING DETAIL 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Breakdown Voltage Voltage (I
R
=100
A)
V
(BR)
70
V
Peak Forward Current
I
F
200
mA
Peak Forward Surge Current
I
FM
500
mA
Power Dissipation at T
amb
= 25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Breakdown Voltage
V
(BR)
70
V
I
R
=10
A
Forward
Voltage V
F
0.5
0.8
0.7
1.1
V
V
I
F
=1mA
I
F
=100mA
Reverse Current
I
R
0.1
A
V
R
=50V
Recovery Time*
t
rr
5
ns
I
F
= I
R
=10mA,
I
R(REC)
=1 mA
Diode Capacitance
C
d
2.5
pF
V
R
=0, f=1MHz
*For switching test circuit diagram see FMMD7000 datasheet
SOT23
FMMD6050
DIODE PIN CONNECTION
!
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