FMMT459
ISSUE 2 - DECEMBER 2001
1
450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR
C
E
B
SUMMARY
V
CEO
=450V; V
CE
(sat) = 100mV; I
C
= 150mA
DESCRIPTION
This new high voltage tranistor provides users with very effiecient
performance combining low V
CE
(sat) and Hfe to give extremely low on state
losses at 450V operation, making it ideal for use in high efficiency Telecom
and protected line switching applications.
FEATURES
Low Saturation Voltage - 90mV @ 50mA
Hfe Min 50 @ 30 mA
I
C
=150mA Continuous
SOT23 package with Ptot 625mW
Specification can be supplied in larger package outlines
APPLICATIONS
Electronic test equipment
Off line switching circuits
Piezo Actuators.
RCD circuits.
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
FMMT459TA
7
8mm embossed
3000 units
FMMT459TC
13
8mm embossed
10000 units
DEVICE MARKING
459
Top View
SOT23
FMMT459
ISSUE 2 - DECEMBER 2001
2
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
500
V
Collector-Emitter Voltage
V
CEO
450
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
500
mA
Continuous Collector Current
I
C
150
mA
Base Current
I
B
200
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
FMMT459
ISSUE 2 - DECEMBER 2001
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
*Measured under plused conditions. Pulse width = 300
s. Dury cycle <2%
NB. For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector-Base
Breakdown Voltage
V
(BR)CBO
500
700
V
I
C
= 100
A
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
450
500
V
I
C
= 10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
8
V
I
E
= 100
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
= 450V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
= 5V
Collector Emitter
Cut-Off Current
I
CES
100
nA
V
CE
= 450V
Collector Emitter
Saturation Voltage
V
CE(sat)
60
70
75
90
mV
mV
I
C
= 20mA, I
B
= 2mA*
I
C
= 50mA, I
B
= 6mA*
Base-Emitter Saturation
Voltage
V
BE(sat)
.76
.9
V
I
C
= 50mA, I
B
= 5mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
.71
.9
V
I
C
= 50mA, V
CE
= 10V*
Static Forward Current
Transfer Ratio
H
FE
50
120
70
I
C
= 30mA, V
CE
= 10V*
I
C
= 50mA, V
CE
= 10V*
Transition Frequency
f
T
50
MHz
I
C
= 10mA, V
CE
= 20V
F = 20MH
Z
Output Capacitance
C
OBO
5
P
F
V
CB
= 20V, f = 1MH
Z
Turn-On Time
t
(on)
113
ns
I
C
= 50mA, V
C
= 100V
I
B1
= 5mA, I
B2
= 10mA
Turn-Off Time
t
(off)
3450
ns
I
C
= 50mA, V
C
= 100V
I
B1
= 5mA, I
B2
= 10mA
FMMT459
ISSUE 2 - DECEMBER 2001
4
ELECTRICAL CHARACTERISTICS
1m
10m
100m
10m
100m
1
1m
10m
100m
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
1m
10m
100m
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1m
10m
100m
0.4
0.6
0.8
1.0
1m
10m
100m
0.4
0.6
0.8
1.0
0
30
60
90
120
150
180
210
V
CE(SAT)
v I
C
Tamb=25C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
V
CE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
V
BE(SAT)
v I
C
I
C
/I
B
=20
100C
25C
-55C
V
CE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
h
FE
v I
C
V
CE
=10V
-55C
25C
100C
N
o
r
m
a
lis
e
d
G
a
in
I
C
Collector Current (A)
25C
V
CE(SAT)
v I
C
I
C
/I
B
=20
100C
-55C
V
BE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
V
BE(ON)
v I
C
V
CE
=10V
100C
25C
-55C
V
BE
(
O
N
)
(V
)
I
C
Collector Current (A)
Ty
pi
c
a
l
G
a
i
n
(
h
FE
)
FMMT459
ISSUE 2 - DECEMBER 2001
5
THERMAL CHARACTERISTICS
100m
1
10
100
1m
10m
100m
1
Single Pulse T
amb
=25C
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
C
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
V
CE
Collector-Emitter Voltage (V)
0
20
40
60
80
100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Derating Curve
Temperature (C)
M
a
x
Pow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
100
1m
10m 100m
1
10
100
1k
0
50
100
150
200
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Pulse Width (s)
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