PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
REFER TO ZTX553 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Power Dissipation at T
amb
=25C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-100
V
I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1
A
V
CB
=-100V, I
E
=0
Emitter Cut-Off Current I
EBO
-0.1
A
V
EB
=-4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1
V
I
C
=-150mA, V
CE
=-10V
Static Forward Current
Transfer Ratio
h
FE
40
10
200
I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
12
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
FXT553
3-39
B
C
E
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