PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 300 Volt V
CEO
APPLICATIONS
* Telephone dialler circuits
REFER TO MPSA92 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-500
mA
Power Dissipation at T
amb
=25C
P
tot
680
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-300
V
I
C
=-100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-300
V
I
C
=-1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.25
A
V
CB
=-200V, I
E
=0
Emitter Cut-Off Current I
EBO
-0.1
A
V
EB
=-3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-20mA, I
B
=-2mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-20mA, I
B
=-2mA
Static Forward Current
Transfer Ratio
h
FE
25
40
25
I
C
=-1mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
Transition
Frequency
f
T
50
MHz
I
C
=-10mA, V
CE
=-20V
f=20MHz
Output Capacitance
C
obo
6
pF
V
CB
=-20V, f=1MHz
E-Line
TO92 Compatible
FXTA92
3-65
B
C
E
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