SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
7
FEATURES
* V
DS
- 200V
PARTMARKING DETAIL -
MT
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-200
V
Continuous Drain Current at T
amb
=25C
I
D
-35
mA
Pulsed Drain Current
I
DM
-400
mA
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-200
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-50
A
A
V
DS
=-200V, V
GS
=0V
V
DS
=-160V, V
GS
=0V,
T=125C
(2)
On-State Drain Current(1)
I
D(on)
-100
mA
V
DS
=-25V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
80
V
GS
=-10V, I
D
=-50mA
Forward Transconductance
(1)(2)
g
fs
25
mS
V
DS
=-25V, I
D
=-50mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-25V, I
D
=-50mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
16
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVP1320F
D
G
S
3 - 423
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D
- Drain Current (mA)
Transfer Characteristics
Transconductance v drain current
g
fs
-
Forwa
r
d
T
ran
s
con
d
uctan
c
e(mS
)
-20
-40
-60
-80
-120
-100
60
50
40
30
10
20
0
-2
-4
-6
-8
-10
-4
-8
-12
-16
-20 -24
-28 -32 -36
-40
Saturation Characteristics
V
DS-
Dr
ai
n S
o
u
r
c
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-5V
-4V
-20V
-5V
V
GS-
Gate Source
Voltage (Volts)
-280
-240
-160
-40
-80
-200
-120
V
GS=
-20V
-6V
-4V
-140
-100
-20
0
-60
-10V
V
GS
=
-8V
I
D
-
Drain Cur
r
e
nt
(
mA
)
V
DS
- Drain Source
Voltage (Volts)
Capacitance v drain-source voltage
V
DS
-Drain Source Voltage
(Volts)
C-Capacitance (pF)
-6V
0
-10
-6
-2
-4
-8
0
-2
-4
-6
-8
-10
I
D=
-60mA
-40mA
-20mA
0
-2
-4
-6
-8
-10
-140
-120
-80
-20
0
-40
-100
-60
0
50
30
10
20
40
0
-20
-40
-60
-80
-100
C
iss
C
oss
C
rss
I
D
-Drain Current
(mA)
-120
-80
-40
-160
I
D
- Drain Current (mA)
V
DS=
-10V
0
V
DS=
-10V
-9V
-10V
-7V
-8V
-7V
0
0
TYPICAL CHARACTERISTICS
g
f
s
-Forward T
ransconductance (mS)
0
-2
-4
-6
-8
-10
0
Q-Charge (nC)
V
GS
-
Gat
e
Sou
r
ce V
o
l
ta
ge
(
V
olts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-50V
I
D=
-150mA
-100V -200V
1.0
2.0
3.0
0
V
DS=
-10V
40
30
20
10
50
60
V
GS
-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
On-resistance v drain current
I
D-
Drain Current (mA)
R
DS(o
n
)
-
D
r
a
in So
u
r
ce
R
e
si
s
t
an
ce
(
)
-6V
-8V
-10V
-10
-100
-1000
V
GS
=-5V
-20V
10
100
-1
1000
Normalised R
DS(on)
and V
GS(th)
vs Temperature
T-Temperature (C)
Normali
s
ed R
DS(on)
a
nd
V
G
S(
t
h
)
-40 -20
0
20 40 60 80
120
100
140 160
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold Vo
ltage V
GS(TH)
I
D=
-50mA
V
GS=
-10V
V
GS=
V
DS
180
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
0.4
I
D=
-1mA
4.0
5.0
6.0
ZVP1320F
ZVP1320F
3 - 424
3 - 425
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
I
D
- Drain Current (mA)
Transfer Characteristics
Transconductance v drain current
g
fs
-
Forwa
r
d
T
ran
s
con
d
uctan
c
e(mS
)
-20
-40
-60
-80
-120
-100
60
50
40
30
10
20
0
-2
-4
-6
-8
-10
-4
-8
-12
-16
-20 -24
-28 -32 -36
-40
Saturation Characteristics
V
DS-
Dr
ai
n S
o
u
r
c
e
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
-5V
-4V
-20V
-5V
V
GS-
Gate Source
Voltage (Volts)
-280
-240
-160
-40
-80
-200
-120
V
GS=
-20V
-6V
-4V
-140
-100
-20
0
-60
-10V
V
GS
=
-8V
I
D
-
Drain Cur
r
e
nt
(
mA
)
V
DS
- Drain Source
Voltage (Volts)
Capacitance v drain-source voltage
V
DS
-Drain Source Voltage
(Volts)
C-Capacitance (pF)
-6V
0
-10
-6
-2
-4
-8
0
-2
-4
-6
-8
-10
I
D=
-60mA
-40mA
-20mA
0
-2
-4
-6
-8
-10
-140
-120
-80
-20
0
-40
-100
-60
0
50
30
10
20
40
0
-20
-40
-60
-80
-100
C
iss
C
oss
C
rss
I
D
-Drain Current
(mA)
-120
-80
-40
-160
I
D
- Drain Current (mA)
V
DS=
-10V
0
V
DS=
-10V
-9V
-10V
-7V
-8V
-7V
0
0
TYPICAL CHARACTERISTICS
g
f
s
-Forward T
ransconductance (mS)
0
-2
-4
-6
-8
-10
0
Q-Charge (nC)
V
GS
-
Gat
e
Sou
r
ce V
o
l
ta
ge
(
V
olts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-50V
I
D=
-150mA
-100V -200V
1.0
2.0
3.0
0
V
DS=
-10V
40
30
20
10
50
60
V
GS
-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
On-resistance v drain current
I
D-
Drain Current (mA)
R
DS(o
n
)
-
D
r
a
in So
u
r
ce
R
e
si
s
t
an
ce
(
)
-6V
-8V
-10V
-10
-100
-1000
V
GS
=-5V
-20V
10
100
-1
1000
Normalised R
DS(on)
and V
GS(th)
vs Temperature
T-Temperature (C)
Normali
s
ed R
DS(on)
a
nd
V
G
S(
t
h
)
-40 -20
0
20 40 60 80
120
100
140 160
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold Vo
ltage V
GS(TH)
I
D=
-50mA
V
GS=
-10V
V
GS=
V
DS
180
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
0.4
I
D=
-1mA
4.0
5.0
6.0
ZVP1320F
ZVP1320F
3 - 424
3 - 425
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