SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
7
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8
COMPLEMENTARY TYPE ZVN2110G
PARTMARKING DETAIL ZVP2110
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current at T
amb
=25C
I
D
-310
mA
Pulsed Drain Current
I
DM
-3
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-100
A
A
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-750
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
8
V
GS
=-10V,I
D
=-375mA
Forward Transconductance
(1)(2)
g
fs
125
mS
V
DS
=-25V,I
D
=-375mA
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
35
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
10
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
-25V, I
D
=-375mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
3 - 429
3 - 430
ZVP2110G
ZVP2110G
0
0.5
1.0
1.5
Q-Gate Charge (nC)
40
20
0
60
0
-20
-40
-60
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-C
a
paci
ta
nce (
pF)
C
iss
C
oss
C
rss
V
/
5
-
G
ate
S
ource V
ol
tag
e (
V
ol
ts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-25V
I
D=-
0.5A
-50V -100V
80
-80
-100
2.0
2.5
3.0
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
N
or
m
al
i
sed
R
and V
-40 -20 0 20 40 60 80
120
100
140 160
I
D=
-0.375A
0
-2
-4
-6
-8
-10
Saturation Characteristics
On-resistance v drain current
I
D-
Drain Current (mA)
R
-Dr
a
i
n
S
our
ce O
n
R
e
s
i
stan
c
e
-5V
-7V
-16V
-9V
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
10
1
100
10
100
1000
V
GS
=-4V
-10V
-20V
-6V
-7V
-8V
-10V
-5V
-4.5V
-12V
V
GS
=
I
-
Dr
ai
n Curr
e
nt (A
m
ps)
V
DS
- Drain Source
Voltage (Volts)
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.2
0
-0.4
-20V
-4V
-3.5V
Junction Temperature (C)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
B
I
-
T
r
an
s
c
o
nductan
ce (
m
S)
0
-2
-4
-6
-8
-10
200
150
100
0
50
250
V
DS=
-10V
D
D
S
G
SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
7
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8
COMPLEMENTARY TYPE ZVN2110G
PARTMARKING DETAIL ZVP2110
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current at T
amb
=25C
I
D
-310
mA
Pulsed Drain Current
I
DM
-3
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-100
A
A
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-750
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
8
V
GS
=-10V,I
D
=-375mA
Forward Transconductance
(1)(2)
g
fs
125
mS
V
DS
=-25V,I
D
=-375mA
Input Capacitance (2)
C
iss
100
pF
Common Source Output
Capacitance (2)
C
oss
35
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
10
pF
Turn-On Delay Time (2)(3)
t
d(on)
7
ns
V
DD
-25V, I
D
=-375mA
Rise Time (2)(3)
t
r
15
ns
Turn-Off Delay Time (2)(3)
t
d(off)
12
ns
Fall Time (2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
3 - 429
3 - 430
ZVP2110G
ZVP2110G
0
0.5
1.0
1.5
Q-Gate Charge (nC)
40
20
0
60
0
-20
-40
-60
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C
-C
a
paci
ta
nce (
pF)
C
iss
C
oss
C
rss
V
/
5
-
G
ate
S
ource V
ol
tag
e (
V
ol
ts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-25V
I
D=-
0.5A
-50V -100V
80
-80
-100
2.0
2.5
3.0
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
N
or
m
al
i
sed
R
and V
-40 -20 0 20 40 60 80
120
100
140 160
I
D=
-0.375A
0
-2
-4
-6
-8
-10
Saturation Characteristics
On-resistance v drain current
I
D-
Drain Current (mA)
R
-Dr
a
i
n
S
our
ce O
n
R
e
s
i
stan
c
e
-5V
-7V
-16V
-9V
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
10
1
100
10
100
1000
V
GS
=-4V
-10V
-20V
-6V
-7V
-8V
-10V
-5V
-4.5V
-12V
V
GS
=
I
-
Dr
ai
n Curr
e
nt (A
m
ps)
V
DS
- Drain Source
Voltage (Volts)
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.2
0
-0.4
-20V
-4V
-3.5V
Junction Temperature (C)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
B
I
-
T
r
an
s
c
o
nductan
ce (
m
S)
0
-2
-4
-6
-8
-10
200
150
100
0
50
250
V
DS=
-10V
D
D
S
G
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