D
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
* 60 Volt V
DS
* R
DS(on)
=14
PARTMARKING DETAIL ML
COMPLEMENTARY TYPE ZVN3306F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current at T
amb
=25C
I
D
-90
mA
Pulsed Drain Current
I
DM
-1.6
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-60
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
A
A
V
DS
=-60 V, V
GS
=0V
V
DS
=-48 V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-400
mA
V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14
V
GS
=-10V, I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60
mS
V
DS
=-18V, I
D
=-200mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-18V, I
D
=-200mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVP3306F
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (C)
Norm
al
i
sed R
an
d V
-40 -20 0 20 40 60 80
120
100
140 160
2.0
1.0
0.6
I
D=
0.37A
0
-2
-4
-6
-8
-10
-1.0
-0.8
-0.6
-0.4
0
-0.2
Saturation Characteristics
On-resistance vs Drain Current
I
D-
Drain Current (mA)
RDS(on)
-D
rai
n S
o
u
r
ce O
n
R
e
s
i
stan
c
e
-6V
-7V
-16V
-9V
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-10V
-6
0
-2
-4
-8
0
-2
-4
-6
-8
-10
-10
V
D
r
a
i
n
So
ur
c
e
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
I
D=
-400mA
-200mA
-100mA
2.6
180
10
1
100
-10
-100
-1000
V
GS
=-5V
-15V
-20V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V
GS
=
I
-
Dr
ai
n
C
urr
e
nt (A
m
ps)
V
DS
- Drain Source
Voltage (Volts)
-6
-8
-10
-14
-16
-12
-4
-2
0
0.5
1.0
1.5
0
Q-Gate Charge (nC)
40
30
20
0
10
50
60
0
-10
-20
-30
-40
-50
-60
-70
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Cap
acit
ance (pF)
Note:V
GS=
0V
f=1MHz
C
iss
C
oss
C
rss
V
/
5
-
G
ate
S
ource V
ol
tag
e (
V
ol
ts)
1
2
Gate charge v gate-source voltage
V
DS
=
-20V
Note:I
D=-
0.2A
-40V -60V
ZVP3306F
G
S
SOT23
3 -434
3 - 435
D
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
* 60 Volt V
DS
* R
DS(on)
=14
PARTMARKING DETAIL ML
COMPLEMENTARY TYPE ZVN3306F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-60
V
Continuous Drain Current at T
amb
=25C
I
D
-90
mA
Pulsed Drain Current
I
DM
-1.6
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-60
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-0.5
-50
A
A
V
DS
=-60 V, V
GS
=0V
V
DS
=-48 V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-400
mA
V
DS
=-18 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
14
V
GS
=-10V, I
D
=-200mA
Forward Transconductance
(1)(2)
g
fs
60
mS
V
DS
=-18V, I
D
=-200mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
25
pF
V
DS
=-18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-18V, I
D
=-200mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVP3306F
TYPICAL CHARACTERISTICS
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (C)
Norm
al
i
sed R
an
d V
-40 -20 0 20 40 60 80
120
100
140 160
2.0
1.0
0.6
I
D=
0.37A
0
-2
-4
-6
-8
-10
-1.0
-0.8
-0.6
-0.4
0
-0.2
Saturation Characteristics
On-resistance vs Drain Current
I
D-
Drain Current (mA)
RDS(on)
-D
rai
n S
o
u
r
ce O
n
R
e
s
i
stan
c
e
-6V
-7V
-16V
-9V
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-10V
-6
0
-2
-4
-8
0
-2
-4
-6
-8
-10
-10
V
D
r
a
i
n
So
ur
c
e
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
I
D=
-400mA
-200mA
-100mA
2.6
180
10
1
100
-10
-100
-1000
V
GS
=-5V
-15V
-20V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
V
GS
=
I
-
Dr
ai
n
C
urr
e
nt (A
m
ps)
V
DS
- Drain Source
Voltage (Volts)
-6
-8
-10
-14
-16
-12
-4
-2
0
0.5
1.0
1.5
0
Q-Gate Charge (nC)
40
30
20
0
10
50
60
0
-10
-20
-30
-40
-50
-60
-70
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Cap
acit
ance (pF)
Note:V
GS=
0V
f=1MHz
C
iss
C
oss
C
rss
V
/
5
-
G
ate
S
ource V
ol
tag
e (
V
ol
ts)
1
2
Gate charge v gate-source voltage
V
DS
=
-20V
Note:I
D=-
0.2A
-40V -60V
ZVP3306F
G
S
SOT23
3 -434
3 - 435
PDF 
ZIP