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Электронный компонент: ZVP3310

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P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current at T
amb
=25C
I
D
-140
mA
Pulsed Drain Current
I
DM
-1.2
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
A
A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
V
GS
=-10V,I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V,I
D
=-150mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
(
3
)
Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP3310A
3-432
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
Transfer Characteristics
-2
-4
-6
-8
-10
0
-10
-20
-30
-40
-50
Saturation Characteristics
V
DS-
Drain Source
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
0
0
V
DS
- Drain Source
Voltage (Volts)
0
-2
-4
-6
-8
-10
-0.6
-0.4
0
-0.2
I
D
-
D
r
a
in C
u
r
r
e
nt
(
Amp
s)
V
DS=
-10V
0
-10
-6
-2
-4
-8
0
-2
-4
-6
-8
-10
I
D=
-0.3A
-0.15A
-0.075A
I
D
-
D
r
a
in C
u
r
r
e
nt
(
Amp
s)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
-4.5V
-3.5V
V
GS=
-20V
-12V
-16V
I
D
- Drain Current (Amps)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
V
GS=
-20V
-12V
-16V
-14V
On-resistance v drain current
I
D-
Drain Current
(mA)
R
DS
(on)
-
D
rain So
u
r
ce
On
R
e
s
i
sta
n
c
e
(
)
10
-10
-100
-1000
-20V
100
-5V
-6V -7V
V
GS
=-4V
-8V -10V
50
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
No
r
malis
e
d R
DS(on)
and V
GS(th)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold V
oltage V
GS(TH)
I
D=
-150mA
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
2.6
180
ZVP3310A
3-433
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-100
V
Continuous Drain Current at T
amb
=25C
I
D
-140
mA
Pulsed Drain Current
I
DM
-1.2
A
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
A
A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
V
GS
=-10V,I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V,I
D
=-150mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
(
3
)
Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP3310A
3-432
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source
Voltage (Volts)
Transfer Characteristics
-2
-4
-6
-8
-10
0
-10
-20
-30
-40
-50
Saturation Characteristics
V
DS-
Drain Source
V
oltage (V
olts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
0
0
V
DS
- Drain Source
Voltage (Volts)
0
-2
-4
-6
-8
-10
-0.6
-0.4
0
-0.2
I
D
-
D
r
a
in C
u
r
r
e
nt
(
Amp
s)
V
DS=
-10V
0
-10
-6
-2
-4
-8
0
-2
-4
-6
-8
-10
I
D=
-0.3A
-0.15A
-0.075A
I
D
-
D
r
a
in C
u
r
r
e
nt
(
Amp
s)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
-4.5V
-3.5V
V
GS=
-20V
-12V
-16V
I
D
- Drain Current (Amps)
-5V
-4V
-0.6
-0.4
-0.2
-10V
-8V
-6V
-9V
-7V
V
GS=
-20V
-12V
-16V
-14V
On-resistance v drain current
I
D-
Drain Current
(mA)
R
DS
(on)
-
D
rain So
u
r
ce
On
R
e
s
i
sta
n
c
e
(
)
10
-10
-100
-1000
-20V
100
-5V
-6V -7V
V
GS
=-4V
-8V -10V
50
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (C)
No
r
malis
e
d R
DS(on)
and V
GS(th)
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai
n-
So
urc
e R
es
ista
nc
e
R
DS(
on
)
Gate Threshold V
oltage V
GS(TH)
I
D=
-150mA
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
2.6
180
ZVP3310A
3-433
TYPICAL CHARACTERISTICS
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
f
s
-T
r
ans
c
o
n
ducta
n
c
e
(
m
S)
0
Q-Charge (nC)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
fs
-
T
r
an
sc
o
nd
ucta
nce (mS)
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capa
c
ita
n
c
e
(
p
F
)
C
oss
V
GS
-
Gat
e
Sou
r
ce V
olta
ge
(
V
olts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
V
DS
=
-25V
I
D=-
0.2A
-50V
-100V
0.1 0.2 0.3 0.4 0.5 0.6
C
iss
C
rss
0.7 0.8 0.9 1.0 1.1 1.2
0
-0.1
-0.2
-0.3 -0.4
-0.5
-0.6
-0.7
-0.8
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
0
-0.1
-0.2
-0.3 -0.4
-0.5
-0.6
-0.7
-0.8
0
V
DS=
-10V
30
20
10
40
80
70
60
50
90
100
0
-10
-20
-30
-40
-50
-60
-70
-80
V
GS=
0V
f
=1MHz
0
30
20
10
40
50
ZVP3310A
3-434