P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 50 Volt V
DS
* R
DS(on)
=10
* Low threshold
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-50
V
Continuous Drain Current at T
amb
=25C
I
D
-175
mA
Pulsed Drain Current
I
DM
-520
mA
Gate Source Voltage
V
GS
20
V
Power Dissipation at T
amb
=25C
P
tot
625
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-50
V
I
D
=-0.25mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-0.8
-2.0
V
ID=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
10
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-15
-60
-100
A
A
nA
V
DS
=-50V, V
GS
=0V
V
DS
=-50V, V
GS
=0V, T=125C
(2)
V
DS
=-25V, V
GS
=0V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10
V
GS
=-5V,I
D
=-100mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V,I
D
=-100mA
Input Capacitance (2)(4)
C
iss
40
pF
Common Source Output
Capacitance (2)(4)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)(4)
C
rss
6
pF
Turn-On Delay Time (2)(3)(4) t
d(on)
10
ns
V
DD
-30V, I
D
=-270mA
Rise Time (2)(3)(4)
t
r
10
ns
Turn-Off Delay Time (2)(3)(4) t
d(off)
18
ns
Fall Time (2)(3)(4)
t
f
25
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2%
(2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
(
4
)
E-Line
TO92 Compatible
ZVP4105A
3-435
D
G
S
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