1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 60V : R
SAT
= 30m ; I
C
= 5A
DESCRIPTION
Packaged in the SOT89 outline this new 5
th
generation low saturation 60V NPN
transistor offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
SAT
= 30mV at 6A
5 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 10 amps
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC-DC modules
Backlight inverters
Power switches
MOSFET gate drivers
DEVICE MARKING
851
ZX5T851Z
ISSUE 2 - DECEMBER 2004
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T851ZTA
7"
12mm
embossed
1000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT89
ZX5T851Z
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
83
C/W
Junction to ambient
(b)
R
JA
60
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
150
V
Collector-emitter voltage
BV
CEO
60
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
5
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZX5T851Z
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2004
3
CHARACTERISTICS
ZX5T851Z
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
150
190
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
150
190
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
60
80
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=120V
V
CB
=120V,T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=120V
V
CB
=120V,T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
17
35
40
90
170
30
55
65
125
230
mV
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=6A, I
B
=300mA*
Base-emitter saturation voltage
V
BE(SAT)
970
1100
mV
I
C
=6A, I
B
=300mA*
Base-emitter turn-on voltage
V
BE(ON)
910
1050
mV
I
C
=6A, V
CE
=1V*
Static forward current transfer ratio
H
FE
100
100
55
20
200
200
105
40
300
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
Transition frequency
f
T
130
I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
31
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
42
760
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZX5T851Z
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2004
5
TYPICAL CHARACTERISTICS
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