SUMMARY
BV
CEO
= -140V : R
SAT
= 85m ; I
C
= -3A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 140V
PNP transistor offers low on state losses making it ideal for use in DC-DC
circuits, line switching and various driving and power management functions.
FEATURES
3 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
APPLICATIONS
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
DEVICE MARKING
955
ZX5T955Z
ISSUE 1 - DECEMBER 2004
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
SOT89
PINOUT
VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZX5T955ZTA
7"
12mm
embossed
1000 units
ORDERING INFORMATION
ZX5T955Z
ISSUE 1 - DECEMBER 2004
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-180
V
Collector-emitter voltage
BV
CEO
-140
V
Emitter-base voltage
BV
EBO
-7
V
Continuous collector current
(a)
I
C
-3
A
Peak pulse current
I
CM
-10
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at TA=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to ambient
(a)
R
JA
83
C/W
Junction to ambient
(b)
R
JA
60
C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZX5T955Z
ISSUE 1 - DECEMBER 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
-180
-200
V
I
C
= -100 A
Collector-emitter breakdown voltage
BV
CER
-180
-200
V
I
C
= -1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
-140
-160
V
I
C
= -10mA*
Emitter-base breakdown voltage
BV
EBO
-7.0
-8.0
V
I
E
= -100 A
Collector cut-off current
I
CBO
1
-20
-0.5
nA
A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
1
-20
-0.5
nA
A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 C
Emitter cut-off current
I
EBO
1
-10
nA
V
EB
= -6V
Collector-emitter saturation voltage
V
CE(SAT)
-37
-50
-80
-255
-60
-75
-115
-330
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -5mA*
I
C
= -0.5A, I
B
= -50mA*
I
C
= -1A, I
B
= -100mA*
I
C
= -3A, I
B
= -300mA*
Base-emitter saturation voltage
V
BE(SAT)
-910
-1010
mV
I
C
= -3A, I
B
= -300mA*
Base-emitter turn on voltage
V
BE(ON)
-800
-900
mV
I
C
= -3A, V
CE
= -5V*
Static forward current transfer ratio
h
FE
100
100
45
225
200
100
5
300
I
C
= -10mA, V
CE
= -5V*
I
C
= -1A, V
CE
= -5V*
I
C
= -3A, V
CE
= -5V*
I
C
= -10A, V
CE
= -5V*
Transition frequency
f
T
120
MHz I
C
= -100mA, V
CE
= -10V
f=50MHz
Output capacitance
C
OBO
33
pF
V
CB
= -10V, f= 1MHz*
Switching times
t
ON
t
OFF
42
636
ns
I
C
= -1A, V
CC
= -50V,
I
B1
= -I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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