Top View
SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
= 0.1
;
I
D
=3.2A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM62N02E6TA
7
8mm embossed
3000 units
ZXM62N02E6TC
13
8mm embossed
10000 units
DEVICE MARKING
2N02
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SOT23-6
ZXM62N02E6
89
PROVISIONAL ISSUE A - JULY 1999
ZXM62N02E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
20
V
Gate Source Voltage
V
GS
12
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)
(V
GS
=4.5V; T
A
=70C)(b)
I
D
3.2
2.6
A
Pulsed Drain Current (c)
I
DM
18
A
Continuous Source Current (Body Diode) (b)
I
S
2.1
A
Pulsed Source Current (Body Diode)
I
SM
18
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
90
PROVISIONAL ISSUE A - JULY 1999
0.1
10
100
0.0001
0.1
100
0
80
160
V
DS
- Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
I
D
-
D
r
a
i
n C
u
r
r
en
t (A
)
DC
1s
100ms
D=0.1
D=0.2
T
h
e
r
m
a
l R
e
sist
a
n
c
e
(
C
/
W
)
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
M
ax P
o
w
er
D
i
s
s
i
p
a
tio
n
(W
at
ts
)
2
1.5
0
T - Temperature (C)
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
10ms
1ms
100us
Pulse Width (s)
40
80
20
0.01
10
0.001
1
80
0
0.0001
1000
0.001 0.01
0.1
1
10
Transient Thermal Impedance
T
h
e
r
m
a
l R
e
sist
a
n
ce
(
C
/
W)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
100
60
120
100
40
20
Refer Note (a)
1
0.5
60
140
20
40
100
120
1
1
Refer Note (a)
Refer Note (b)
Refer Note (a)
CHARACTERISTICS
ZXM62N02E6
91
PROVISIONAL ISSUE A - JULY 1999
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C
unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
20
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=20V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
0.7
V
I
D
=250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1)
R
DS(on)
0.1
0.125
V
G S
=4.5V, I
D
=2.2A
V
G S
=2.7V, I
D
=1.1A
Forward Transconductance
g
fs
3.2
S
V
DS
=10V,I
D
=1.1A
DYNAMIC (3)
Input Capacitance
C
iss
460
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
150
pF
Reverse Transfer Capacitance
C
rss
50
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
4.0
ns
V
DD
=10V, I
D
=2.2A
R
G
=6.0
, R
D
=4.4
(refer to test
circuit)
Rise Time
t
r
10.4
ns
Turn-Off Delay Time
t
d(off)
16.9
ns
Fall Time
t
f
8.0
ns
Total Gate Charge
Q
g
6.3
nC
V
DS
=16V,V
GS
=4.5V,
I
D
=2.2A (refer to
test circuit)
Gate-Source
Charge Q
gs
1.5
nC
Gate Drain Charge
Q
gd
2.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
j
=25C, I
S
=2.2A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
17.5
ns
T
j
=25C, I
F
=2.2A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
8.6
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXM62N02E6
92
PROVISIONAL ISSUE A - JULY 1999
0.1
100
1
2.5
4
0.1
10
100
0.2
0.8
1.6
200
50
-100
0.1
10
100
V
DS
- Drain-Source Voltage (V)
Output Characteristics
0.1
100
I
D
-
D
r
a
i
n C
u
r
r
e
nt
(
A
)
V
DS
=10V
I
D
- D
r
a
i
n Cur
r
e
n
t (A
)
100
10
0.1
V
GS
- Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS
(
on)
- D
r
a
i
n-S
our
c
e
O
n
-Re
s
is
ta
nc
e
(
)
10
1
0.01
I
D
- Drain Current (A)
On-Resistance v Drain Current
3V
I
D
- D
r
a
i
n
Curre
nt (A
)
100
10
VGS
0.1
V
DS
- Drain-Source Voltage (V)
Output Characteristics
N
o
r
m
alis
ed R
DS
(
on)
an
d
V
G
S
(th
)
1.8
1.0
Tj - Junction Temperature (C)
Normalised RDS(on) and VGS(th)
v Temperature
I
SD
-
R
ever
se
D
r
ain
C
u
r
r
en
t
(
A
)
100
10
0.1
V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150C
T=25C
+150 C
T=150C
V
GS
=4.5V
T=25C
R
DS(on)
I
D
=2.2A
V
GS
=V
DS
I
D
=250uA
V
GS(th)
1.5
3
2
3.5
1
0.4
1.0
0.6
1.2
1
1
1
2.5V
2V
3.5V
4V
5V
4.5V
VGS
3V
2.5V
2V
3.5V
4V
4.5V
5V
+25 C
1
1
10
10
0.4
1.2
0.6
0.8
1.4
1.6
150
0
-50
100
0.1
1
V
GS
=3V
V
GS
=5V
1.5V
1.4
TYPICAL CHARACTERISTICS
ZXM62N02E6
93
PROVISIONAL ISSUE A - JULY 1999
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