ADVANCE INFORMATION
1
S E M I C O N D U C T O R S
SUMMARY
N-Channel : V
(BR)DSS
= 30V : R
DS(on)
= 0.050 ; I
D
= 5.4A
P-Channel : V
(BR)DSS
= -30V : R
DS(on)
= 0.070 ; I
D
= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor drive
LCD backlighting
DEVICE MARKING
ZXMC
3A17
ZXMC3A17DN8
PROVISIONAL ISSUE C - AUGUST 2004
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY PER REEL
ZXMC3A17DN8TA
7"
12mm
500 units
ZXMC3A17DN8TC
13"
12mm
2500 units
ORDERING INFORMATION
Q2 = P-channel
Top View
PINOUT
SO8
Q1 = N-channel
ZXMC3A17DN8
S E M I C O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
2
ADVANCE INFORMATION
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R
JA
100
C/W
Junction to Ambient
(a) (e)
R
JA
70
C/W
Junction to Ambient
(b) (d)
R
JA
60
C/W
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with two active die running at equal power.
THERMAL RESISTANCE
PARAMETER
SYMBOL
N-channel
P-channel
UNIT
Drain-Source Voltage
V
DSS
30
-30
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current
(V
GS
= 10V; T
A
=25C)
(b)(d)
(V
GS
= 10V; T
A
=70C)
(b)(d)
(V
GS
= 10V; T
A
=25C)
(a)(d)
I
D
5.4
4.3
4.1
-4.4
-3.6
-3.4
A
Pulsed Drain Current
(c)
I
DM
23
-20
A
Continuous Source Current (Body Diode)
(b)
I
S
2.6
-2.5
A
Pulsed Source Current (Body Diode)
(c)
I
SM
23
-20
A
Power Dissipation at T
A
=25C
(a) (d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C
(a) (e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at T
A
=25C
(b) (d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ADVANCE INFORMATION
CHARACTERISTICS
ZXMC3A17DN8
S E M I C O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
3
ZXMC3A17DN8
S E M I C O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
ADVANCE INFORMATION
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DSS
30
V
I
D
= 250 A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
0.5
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1.0
V
I
D
= 250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.050
0.065
V
GS
= 10V, I
D
= 7.8A
V
GS
= 4.5V, I
D
= 6.8A
Forward
Transconductance
(1) (3)
g
fs
10
S
V
DS
= 10V, I
D
= 7.8A
DYNAMIC
(3)
Input Capacitance
C
iss
600
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
104
pF
Reverse Transfer Capacitance
C
rss
58.5
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
2.9
ns
V
DD
= 15V, I
D
=3.5A
R
G
6.0 ,
V
GS
= 10V
Rise Time
t
r
6.4
ns
Turn-Off Delay Time
t
d(off)
16
ns
Fall Time
t
f
11.2
ns
Gate Charge
Q
g
6.9
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total Gate Charge
Q
g
12.2
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-Source Charge
Q
gs
1.7
nC
Gate-Drain Charge
Q
gd
2.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
j
=25C, I
S
= 3.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
18.8
ns
T
j
=25C, I
F
= 3.5A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
14.1
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
(1)
Measured under pulsed conditions. Pulse width
300ms; Duty cycle
2%.
(2)
Switching characteristics are independent of operating junction temperature.
(3)
For design aid only, not subject to production testing.
ZXMC3A17DN8
S E M I C O N D U C T O R S
PROVISIONAL ISSUE C - AUGUST 2004
ADVANCE INFORMATION
5
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DSS
-30
V
I
D
= -250 A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1.0
A
V
DS
= -30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.0
V
I
D
= -250 A, V
DS
=V
GS
Static Drain-Source
On-State Resistance
(1)
R
DS(on)
0.070
0.110
V
GS
= -10V, I
D
= -3.2A
V
GS
= -4.5V, I
D
= -2.5A
Forward
Transconductance
(1) (3)
g
fs
6.4
S
V
DS
= -15V, I
D
= -3.2A
DYNAMIC
(3)
Input Capacitance
C
iss
630
pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
113
pF
Reverse Transfer
Capacitance
C
rss
78
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
1.7
ns
V
DD
= -15V, I
D
= -1A
R
G
6.0 ,
V
GS
= -10V
Rise Time
t
r
2.9
ns
Turn-Off Delay Time
t
d(off)
29.2
ns
Fall Time
t
f
8.7
ns
Gate Charge
Q
g
8.3
nC
V
DS
= -15V, V
GS
= -5V
I
D
= -3.2A
Total Gate Charge
Q
g
15.8
nC
V
DS
= -15V, V
GS
= -10V
I
D
= -3.2A
Gate-Source Charge
Q
gs
1.8
nC
Gate Drain Charge
Q
gd
2.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
j
=25C, I
S
= -2.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
19.5
ns
T
j
=25C, I
S
= -1.7A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
16.3
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES:
(1)
Measured under pulsed conditions. Pulse width
300ms; Duty cycle
2%.
(2)
Switching characteristics are independent of operating junction temperature.
(3)
For design aid only, not subject to production testing.
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