Top View
SUMMARY
V
(BR)DSS
=-30V; R
DS(ON)
=0.185 ; I
D
=-2.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMD63P03XTA
7
12mm embossed
1000 units
ZXMD63P03XTC
13
12mm embossed
4000 units
DEVICE MARKING
ZXM63P03
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
MSOP8
ZXMD63P03X
49
PROVISIONAL ISSUE A - JULY 1999
50
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
143
C/W
Junction to Ambient (b)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
120
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate- Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25C)(b)(d)
(V
GS
=4.5V; T
A
=70C)(b)(d)
I
D
-2.0
-1.6
A
Pulsed Drain Current (c)(d)
I
DM
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
I
S
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
I
SM
-9.6
A
Power Dissipation at T
A
=25C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/C
Power Dissipation at T
A
=25C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/C
Power Dissipation at T
A
=25C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ZXMD63P03X
PROVISIONAL ISSUE A - JULY 1999
0.1
10
100
0.0001
0.1
100
0
80
160
V
DS
- Drain-Source Voltage (V)
Safe Operating Area
0.1
10
100
I
D
- D
r
a
i
n C
u
r
r
e
n
t (A
)
DC
1s
100ms
D=0.1
D=0.2
T
h
er
m
a
l R
e
s
i
s
t
an
c
e
(
C
/
W
)
120
60
D=0.05
0
Pulse Width (s)
Transient Thermal Impedance
M
a
x
P
o
we
r
D
i
s
s
i
pa
ti
on (W
a
tts
)
1.4
0.8
0
T - Temperature ()
Derating Curve
Refer Note (b)
Single Pulse
D=0.5
10ms
1ms
100us
Pulse Width (s)
100
40
80
20
0.01
10
0.001
1
160
80
0
0.0001
1000
0.001 0.01
0.1
1
10
Transient Thermal Impedance
T
h
e
r
m
a
l R
e
sist
a
n
ce
(
C
/
W)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
100
140
60
120
100
40
20
Refer Note (a)
1.2
0.6
1.0
0.4
0.2
60
140
20
40
100
120
10
10
Refer Note (a)
Refer Note (a)
Refer Note (b)
CHARACTERISTICS
51
ZXMD63P03X
PROVISIONAL ISSUE A - JULY 1999
52
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-30V, V
G S
=0V
Gate-Body Leakage
I
GSS
100
nA
V
G S
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
G S(th)
-1.0
V
I
D
=-250
A, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.185
0.27
V
G S
=-10V, I
D
=-1.2A
V
G S
=-4.5V, I
D
=-0.6A
Forward Transconductance (3)
g
fs
0.92
S
V
DS
=-10V,I
D
=-0.6A
DYNAMIC (3)
Input Capacitance
C
iss
270
pF
V
DS
=-25 V, V
G S
=0V,
f=1MHz
Output Capacitance
C
oss
80
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.6
ns
V
DD
=-15V, I
D
=-2.4A
R
G
=6.2
, R
D
=6.2
(Refer to test
circuit)
Rise Time
t
r
4.8
ns
Turn-Off Delay Time
t
d(off)
13.1
ns
Fall Time
t
f
9.3
ns
Total Gate Charge
Q
g
7
nC
V
DS
=-24V,V
G S
=-10V,
I
D
=-1.2A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
1.2
nC
Gate Drain Charge
Q
gd
2
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25C, I
S
=-1.2A,
V
G S
=0V
Reverse Recovery Time (3)
t
rr
21.4
ns
T
j
=25C, I
F
=-1.2A,
di/dt= 100A/
s
Reverse Recovery Charge(3)
Q
rr
15.7
nC
(1) Measured under pulsed conditions. Width=300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMD63P03X
PROVISIONAL ISSUE A - JULY 1999
0.1
10
100
2
4
6
0.1
1
10
0.2
1.4
200
50
-100
0.1
100
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
0.1
10
100
-I
D
-
D
r
a
i
n Cur
r
e
n
t (A
)
-VGS
10V
VDS=-10V
-I
D
- D
r
a
i
n C
u
r
r
e
nt (A
)
10
1
0.1
-V
GS
- Gate-Source Voltage (V)
Typical Transfer Characteristics
R
D
S
(
on)
- D
r
a
i
n
-
Sourc
e
O
n
-R
e
s
i
s
ta
nc
e
(
)
10
1
0.1
-I
D
- Drain Current (A)
On-Resistance v Drain Current
-I
D
-
D
r
a
i
n Cur
r
e
n
t (A
)
100
-VGS
0.1
-V
DS
- Drain-Source Voltage (V)
Output Characteristics
N
o
r
m
alis
e
d
R
DS
(
on)
a
nd V
GS
(
t
h
)
2
1
0
T
j
- Junction Temperature (C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
-I
SD
-
R
e
v
e
r
s
e D
r
ai
n
C
u
r
r
e
n
t
(
A
)
10
0.1
0.01
-V
SD
- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=150C
T=25C
+150C
T=150C
VGS=-10V
T=25C
RDS(on)
ID=-1.2A
VGS=VDS
ID=-250uA
VGS(th)
5V
4.5V
4V
3.5V
3V
2.5V
8V
6V
7V
1
1
1
10
10V 8V 7V 6V
5V
4.5V
4V
3.5V
3V
2.5V
10
1
+25 C
1.5
0.5
150
0
100
-50
3.5
5.5
2.5
3
4.5
5
VGS=-3V
VGS=-4.5V
VGS=-10V
0.4
1.0
0.8
1.2
0.6
1
TYPICAL CHARACTERISTICS
53
ZXMD63P03X
PROVISIONAL ISSUE A - JULY 1999
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