S E M I C O N D U C T O R S
SUMMARY
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.12 ; I
D
= 3.1A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.21 ; I
D
= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 surface mount package
APPLICATIONS
Single phase DC fan motor drive
DEVICE MARKING
ZXMH
C3A01
ZXMHC3A01T8
DRAFT ISSUE E - APRIL 2004
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
1
SM8
G
2
D ,
1
D
2
D ,
3
D
4
G
3
S
2
S
3
S
1
S
4
G
1
G
4
Top View
PINOUT
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMHC3A01T8TA
7"
12mm
1,000 units
ZXMHC3A01T8TC
13"
12mm
4,000 units
ORDERING INFORMATION
ZXMHC3A01T8
S E M I C O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
2
PARAMETER
SYMBOL
N-Channel
P-channel
UNIT
Drain-source voltage
V
DSS
30
-30
V
Gate-source voltage
V
GS
20
20
V
Continuous drain current (V
GS
= 10V; T
A
=25C)
(b)(d)
(V
GS
= 10V; T
A
=70C)
(b)(d)
(V
GS
= 10V; T
A
=25C)
(a)(d)
I
D
3.1
2.5
2.7
-2.3
-1.8
-2.0
A
A
A
Pulsed drain current
(c)
I
DM
14.5
-10.8
A
Continuous source current (body diode)
(b)
I
S
2.3
-2.2
A
Pulsed source current (body diode)
(c)
I
SM
14.5
-10.8
A
Power dissipation at T
A
=25C
(a) (d)
Linear derating factor
P
D
1.3
10.4
W
mW/C
Power dissipation at T
A
=25C
(b) (d)
Linear derating factor
P
D
1.7
13.6
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a) (d)
R
JA
96
C/W
Junction to ambient
(b) (d)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300 S - pulse width limited by maximum junction temperature. Refer
to transient thermal impedance graph.
(d) For device with one active die.
THERMAL RESISTANCE
ZXMHC3A01T8
S E M I C O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
3
CHARACTERISTICS
ZXMHC3A01T8
S E M I C O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DSS
30
V
I
D
= 250 A, V
GS
=0V
Zero gate voltage drain current
I
DSS
1.0
A
V
DS
=30V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
1.0
3.0
V
I
D
= 250 A, V
DS
=V
GS
Static drain-source on-state
resistance
(1)
R
DS(on)
0.12
0.18
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
Forward transconductance
(1) (3)
g
fs
3.5
S
V
DS
=4.5V, I
D
= 2.5A
DYNAMIC
(3)
Input capacitance
C
iss
190
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
38
pF
Reverse transfer capacitance
C
rss
20
pF
SWITCHING
(2) (3)
Turn-on-delay time
t
d(on)
1.7
ns
V
DD
= 15V, I
D
= 2.5A
R
G
6.0, V
GS
= 10V
Rise time
t
r
2.3
ns
Turn-off delay time
t
d(off)
6.6
ns
Fall time
t
f
2.9
ns
Total gate charge
Q
g
3.9
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
Gate-source charge
Q
gs
0.6
nC
Gate drain charge
Q
gd
0.9
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.95
V
T
j
=25C, I
S
= 1.7A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
17.7
ns
T
j
=25C, I
S
= 2.5A,
di/dt=100A/ s
Reverse recovery charge
(3)
Q
rr
13.0
nC
N-channel
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC3A01T8
S E M I C O N D U C T O R S
DRAFT ISSUE E - APRIL 2004
5
N-channel
TYPICAL CHARACTERISTICS
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