S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= 100V; R
DS(ON)
= 0.25
I
D
= 2.1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
DEVICE MARKING
ZXMN
10A08D
ZXMN10A08DN8
ISSUE 4 - JANUARY 2005
1
100V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN10A08DN8TA
7"
12mm
500 units
ZXMN10A08DN8TC
13"
12mm
2,500 units
ORDERING INFORMATION
Top View
PINOUT
SO8
ZXMN10A08DN8
S E M I C O N D U C T O R S
ISSUE 4 - JANUARY 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R
JA
100
C/W
Junction to ambient (b)
R
JA
69
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DSS
100
V
Gate source voltage
V
GS
20
V
Continuous drain current V
GS
=10V; T
A
=25C
(b)
V
GS
=10V; T
A
=70C
(b)
V
GS
=10V; T
A
=25C
(a)
I
D
2.1
1.7
1.6
A
Pulsed drain current
(c)
I
DM
9
A
Continuous source current (body diode)
(b)
I
S
2.6
A
Pulsed source current (body diode)
(c)
I
SM
9
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.25
10
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.8
14.5
W
mW/C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMN10A08DN8
S E M I C O N D U C T O R S
ISSUE 4 - JANUARY 2005
3
TYPICAL CHARACTERISTICS
ZXMN10A08DN8
S E M I C O N D U C T O R S
ISSUE 4 - JANUARY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage
V
(BR)DSS
100
V
I
D
=250 A, V
GS
=0V
Zero gate voltage drain current
I
DSS
0.5
A
V
DS
=100V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
2.0
V
I
D
=250 A, V
DS
= V
GS
Static drain-source on-state resistance
(1)
R
DS(on)
0.25
0.30
V
GS
=10V, I
D
=3.2A
V
GS
=6V, I
D
=2.6A
Forward transconductance
(1)(3)
g
fs
5.0
S
V
DS
=15V,I
D
=3.2A
DYNAMIC
(3)
Input capacitance
C
iss
405
pF
V
DS
=50 V, V
GS
=0V,
f=1MHz
Output capacitance
C
oss
28.2
pF
Reverse transfer capacitance
C
rss
14.2
pF
SWITCHING
(2) (3)
Turn-on delay time
t
d(on)
3.4
ns
V
DD
=30V, I
D
=1.2A
R
G
6.0 , V
GS
=10V
Rise time
t
r
2.2
ns
Turn-off delay time
t
d(off)
8
ns
Fall time
t
f
3.2
ns
Gate charge
Q
g
4.2
nC
V
DS
=50V,V
GS
=5V,
I
D
=1.2A
Total gate charge
Q
g
7.7
nC
V
DS
=50V,V
GS
=10V,
I
D
=1.2A
Gate-source charge
Q
gs
1.8
nC
Gate-drain charge
Q
gd
2.1
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.87
0.95
V
T
J
=25C, I
S
=3.2A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
27
ns
T
J
=25C, I
F
=1.2A,
di/dt= 100A/ s
Reverse recovery charge
(3)
Q
rr
32
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
NOTES:
(1) Measured under pulsed conditions. Width
= 300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A08DN8
S E M I C O N D U C T O R S
ISSUE 4 - JANUARY 2005
5
TYPICAL CHARACTERISTICS
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