SUMMARY
V
(BR)DSS
= 30V; R
DS(ON)
= 0.050
I
D
= 4.6A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
DEVICE MARKING
3A3
ZXMN3A03E6
ISSUE 1 - MARCH 2002
1
30V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A03E6TA
7"
8mm
3000 units
ZXMN3A03E6TC
13"
8mm
10000 units
ORDERING INFORMATION
Top View
SOT23-6
ZXMN3A03E6
ISSUE 1 - MARCH 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate Source Voltage
VGS
20
V
Continuous Drain Current VGS=10V; TA=25C (b)
VGS=10V; TA=70C (b)
VGS=10V; TA=25C (a)
ID
4.6
3.7
3.7
A
Pulsed Drain Current (c)
IDM
17
A
Continuous Source Current (Body Diode) (b)
IS
2.6
A
Pulsed Source Current (Body Diode) (c)
ISM
17
A
Power Dissipation at TA=25C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXMN3A03E6
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
30
V
ID=250 A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
0.5
A
VDS=30V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
1
V
I
D
=250 A, VDS= VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.050
0.065
VGS=10V, ID=7.8A
VGS=4.5V, ID=6.8A
Forward Transconductance (1)(3)
gfs
10
S
VDS=10V,ID=7.8A
DYNAMIC (3)
Input Capacitance
Ciss
600
pF
VDS=25 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
104
pF
Reverse Transfer Capacitance
Crss
58.5
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
2.9
ns
VDD =15V, ID=3.5A
RG=6.0 , VGS=10V
Rise Time
tr
6.4
ns
Turn-Off Delay Time
td(off)
16.0
ns
Fall Time
tf
11.2
ns
Gate Charge
Qg
6.9
nC
VDS=15V,VGS=5V,
I
D
=3.5A
Total Gate Charge
Qg
12.6
nC
VDS=15V,VGS=10V,
I
D
=3.5A
Gate-Source Charge
Qgs
2.0
nC
Gate-Drain Charge
Qgd
2.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25C, IS=3.2A,
VGS=0V
Reverse Recovery Time (3)
trr
18.8
ns
TJ=25C, IF=3.5A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Qrr
14.1
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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