1
SUMMARY
V
(BR)DSS
=30V : R
DS(on)
=0.15 ; I
D
=2A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
DEVICE MARKING
3B1
ZXMN3B01F
ISSUE 1 - DECEMBER 2005
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B01FTA
7"
8mm
3000 units
ZXMN3B01FTC
13"
8mm
10000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT23
ZXMN3B01F
S E M I C O N D U C T O R S
ISSUE 1 - DECEMBER 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
200
C/W
Junction to Ambient
(b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GS
12
V
Continuous Drain Current @ V
GS
=4.5V; T
A
=25C
(b)
@ V
GS
=4.5V; T
A
=70C
(b)
@ V
GS
=4.5V; T
A
=25C
(a)
I
D
2.0
1.6
1.7
A
A
A
Pulsed Drain Current
(c)
I
DM
9.4
A
Continuous Source Current (Body Diode)
(b)
I
S
1.3
A
Pulsed Source Current (Body Diode)
(c)
I
SM
9.4
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMN3B01F
S E M I C O N D U C T O R S
ISSUE 1 - DECEMBER 2005
3
TYPICAL CHARACTERISTICS
ZXMN3B01F
S E M I C O N D U C T O R S
ISSUE 1 - DECEMBER 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
=250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
=250 A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.150
0.240
V
GS
=4.5V, I
D
=1.7A
V
GS
=2.5V, I
D
=1.2A
Forward Transconductance
(1) (3)
g
fs
4
S
V
DS
=15V,I
D
=1.7A
DYNAMIC
(3)
Input Capacitance
C
iss
258
pF
V
DS
= 15V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
50
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.69
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 1A
R
G
6.0
Rise Time
t
r
3.98
ns
Turn-Off Delay Time
t
d(off)
8
ns
Fall Time
t
f
5.27
ns
Total Gate Charge
Q
g
2.93
nC
V
DS
=15V,V
GS
= 4.5V,
I
D
=1.7A
Gate-Source Charge
Q
gs
0.57
nC
Gate-Drain Charge
Q
gd
0.92
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
= 1.7A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
10.85
ns
T
J
=25C, I
F
= 1.3A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
5
NC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN3B01F
S E M I C O N D U C T O R S
ISSUE 1 - DECEMBER 2005
5
CHARACTERISTICS
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