1
S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
=30V : R
DS
(
on
)=0.08 ; I
D
=3.5A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC-DC converters
Power management functions
Disconnect switches
Motor control
DEVICE MARKING
3B14
ZXMN3B14F
ISSUE 1 - JUNE 2005
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B14FTA
7"
8mm
3,000 units
ZXMN3B14FTC
13"
8mm
10,000 units
ORDERING INFORMATION
PINOUT
PACKAGE
ZXMN3B14F
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
125
C/W
Junction to Ambient
(b)
R
JA
83
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GS
12
V
Continuous Drain Current @ V
GS
= 4.5V; T
A
=25C
(b)
@ V
GS
= 4.5V; T
A
=70C
(b)
@ V
GS
= 4.5V; T
A
=25C
(a)
I
D
3.5
2.9
2.9
A
A
A
Pulsed Drain Current
(c)
I
DM
16
A
Continuous Source Current (Body Diode)
(b)
I
S
2.4
A
Pulsed Source Current (Body Diode)
(c)
I
SM
16
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
1
8
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
1.5
12
W
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMN3B14F
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
3
TYPICAL CHARACTERISTICS
ZXMN3B14F
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
30
V
I
D
= 250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
= 30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
12V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
0.7
V
I
D
= 250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.080
0.140
V
GS
= 4.5V, I
D
= 3.1A
V
GS
= 2.5V, I
D
= 2.2A
Forward Transconductance
(1) (3)
g
fs
8.5
S
V
DS
= 15V, I
D
= 3.1A
DYNAMIC
(3)
Input Capacitance
C
iss
568
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
101
pF
Reverse Transfer Capacitance
C
rss
66
pF
SWITCHING
(2) (3)
Turn-On-Delay Time
t
d(on)
3.6
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 1A
R
G
6.0
Rise Time
t
r
4.9
ns
Turn-Off Delay Time
t
d(off)
17.3
ns
Fall Time
t
f
9.8
ns
Total Gate Charge
Q
g
6.7
nC
V
DS
= 15V, V
GS
= 4.5V
I
D
= 3.1A
Gate-Source Charge
Q
gs
1.4
nC
Gate Drain Charge
Q
gd
1.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.82
0.95
V
T
j
=25C, I
S
= 3.1A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
10.8
ns
T
j
=25C, I
F
= 1.6A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
4.54
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
N-CHANNEL TYPICAL CHARACTERISTICS
ZXMN3B14F
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
5
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