PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
1
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=60V; R
DS(ON)
=0.045
D
=5.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXMN6A09DN8TA
7"
12mm
500 units
ZXMN6A09DN8TC
13"
12mm
2500 units
DEVICE MARKING
ZXMN
6A09D
Top View
SO8
PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=10V; T
A
=25C)(b)(d)
(V
GS
=10V; T
A
=70C)(b)(d)
(V
GS
=10V; T
A
=25C)(a)(d)
I
D
5.2
4.1
3.9
A
Pulsed Drain Current (c)
I
DM
17.6
A
Continuous Source Current (Body Diode) (b)
I
S
3.5
A
Pulsed Source Current (Body Diode)(c)
I
SM
15
A
Power Dissipation at T
A
=25C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C (a)(e)
Linear Derating Factor
P
D
1.81
14.5
W
mW/C
Power Dissipation at T
A
=25C (b)(d)
Linear Derating Factor
P
D
2.16
17.3
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
69
C/W
Junction to Ambient (b)(d)
R
JA
58
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
3
100m
1
10
100
10m
100m
1
10
Single Pulse
T
amb
=25 C
One active die
R
DS(on)
Limit
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current
(A)
V
DS
Drain-Source Voltage (V)
0
20
40
60
80
100
120
140
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Two active die
One active die
Derating Curve
Temperature ( C)
Max Power Dissi
pation (W)
100
1m
10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
80
90
100
110
T
amb
=25 C
One active die
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (
C/W)
Pulse Width (s)
100
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25 C
One active die
Pulse Power Dissipation
Pulse Width (s)
Maximum Power
(W)
THERMAL CHARACTERISTICS
PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
4
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
60
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.045
0.075
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
Forward Transconductance (3)
g
fs
15
S
V
DS
=15V,I
D
=8.2A
DYNAMIC (3)
Input Capacitance
C
iss
1407
pF
V
DS
=40 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
121
pF
Reverse Transfer Capacitance
C
rss
59
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
4.9
ns
V
DD
=15V, I
D
=3.5A
R
G
=6.0
, V
GS
=10V
(refer to test
circuit)
Rise Time
t
r
5.0
ns
Turn-Off Delay Time
t
d(off)
25.3
ns
Fall Time
t
f
4.6
ns
Gate Charge
Q
g
12.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
24.2
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge
Q
gs
5.2
nC
Gate-Drain Charge
Q
gd
3.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
=6.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
26.3
ns
T
J
=25C, I
F
=3.5A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
26.6
nC
NOTES
(1) Measured under pulsed conditions. Width
=
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE D - AUGUST 2001
ZXMN6A09DN8
5
0.1
1
10
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
2
3
4
5
0.1
1
10
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
0.1
1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
4V
5V
3.5V
2.5V
T = 25 C
3V
V
GS
I
D
Drain Current
(A)
V
DS
Drain-Source Voltage (V)
2V
2.5V
4V
5V
3V
T = 150 C
V
GS
3.5V
I
D
Drain Current
(A)
V
DS
Drain-Source Voltage (V)
V
DS
= 10V
T = 25 C
T = 150 C
I
D
Drain Current
(A)
V
GS
Gate-Source Voltage (V)
R
DS(on)
V
GS
= 10V
I
D
= 12A
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
Normali
sed R
DS(on)
and V
GS(th)
Tj Junction Temperature ( C)
10V
4V
5V
3.5V
T = 25 C
3V
V
GS
R
DS(on)
Drain-Source On-Resist
ance
I
D
Drain Current (A)
T = 150 C
T = 25 C
V
SD
Source-Drain Voltage (V)
I
SD
Reverse Drain Current
(A)
TYPICAL CHARACTERISTICS
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