S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= 60V; R
DS(ON)
= 0.045
I
D
= 5.1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and Solenoid driving
Motor control
DEVICE MARKING
ZXMN
6A09
ZXMN6A09G
PROVISIONAL ISSUE D - SEPTEMBER 2003
60V N-CHANNEL ENHANCEMENT MODE MOSFET
1
Top View
SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A09GTA
7"
12mm
1000 units
ZXMN6A09GTC
13"
12mm
4000 units
ORDERING INFORMATION
ZXMN6A09G
S E M I C O N D U C T O R S
PROVISIONAL ISSUE D - SEPTEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(d)
R
JA
62.5
C/W
Junction to Ambient
(b)(d)
R
JA
32.2
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=10V; T
A
=25C)
(b)
(V
GS
=10V; T
A
=70C)
(b)
(V
GS
=10V; T
A
=25C)
(a)
I
D
6.9
5.6
5.0
A
Pulsed Drain Current
(c)
I
DM
30.6
A
Continuous Source Current (Body Diode)
(b)
I
S
3.5
A
Pulsed Source Current (Body Diode)
(c)
I
SM
30.6
A
Power Dissipation at T
A
=25C
(a)(d)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C
(b)(d)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
CHARACTERISTICS
ZXMN6A09G
S E M I C O N D U C T O R S
PROVISIONAL ISSUE D - SEPTEMBER 2003
3
ZXMN6A09G
S E M I C O N D U C T O R S
PROVISIONAL ISSUE D - SEPTEMBER 2003
4
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
60
V
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.045
0.070
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
Forward Transconductance (3)
g
fs
15
S
V
DS
=15V,I
D
=8.2A
DYNAMIC (3)
Input Capacitance
C
iss
1407
pF
V
DS
=40 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
121
pF
Reverse Transfer Capacitance
C
rss
59
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
4.9
ns
V
DD
=15V, I
D
=3.5A
R
G
6.0, V
GS
=10V
(refer to test
circuit)
Rise Time
t
r
5.0
ns
Turn-Off Delay Time
t
d(off)
25.3
ns
Fall Time
t
f
4.6
ns
Gate Charge
Q
g
12.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
24.2
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge
Q
gs
5.2
nC
Gate-Drain Charge
Q
gd
3.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
=6.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
26.3
ns
T
J
=25C, I
F
=3.5A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
26.6
nC
NOTES
(1) Measured under pulsed conditions. Width
=300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN6A09G
S E M I C O N D U C T O R S
PROVISIONAL ISSUE D - SEPTEMBER 2003
5
TYPICAL CHARACTERISTICS
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