SUMMARY
V
(BR)DSS
= 60V: R
DS(ON)
= 0.055
; I
D
= 4.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Motor control
DEVICE MARKING
ZXMN
6A25D
ZXMN6A25DN8
PROVISIONAL ISSUE B - JUNE 2003
S E M I C O N D U C T O R S
1
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A25DN8TA
7'`
12mm
500 units
ZXMN6A25DN8TC
13'`
12mm
2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
ZXMN6A25DN8
PROVISIONAL ISSUE B - JUNE 2003
S E M I C O N D U C T O R S
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R
JA
100
C/W
Junction to Ambient
(a) (e)
R
JA
70
C/W
Junction to Ambient
(b) (d)
R
JA
60
C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current @V
GS
=10V; T
A
=25C
(b) (d)
@V
GS
=10V; T
A
=70C
(b) (d)
@V
GS
=10V; T
A
=25C
(a) (d)
I
D
4.7
3.7
3.6
A
A
A
Pulsed Drain Current
(c)
I
DM
22
A
Continuous Source Current (Body Diode)
(b)
I
S
3.5
A
Pulsed Source Current (Body Diode)
(c)
I
SM
22
A
Power Dissipation at T
A
=25C
(a) (d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at T
A
=25C
(a) (e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at T
A
=25C
(b) (d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXMN6A25DN8
PROVISIONAL ISSUE B - JUNE 2003
3
S E M I C O N D U C T O R S
TYPICAL CHARACTERISTICS
ZXMN6A25DN8
PROVISIONAL ISSUE B - JUNE 2003
4
S E M I C O N D U C T O R S
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
60
V
I
D
=250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1.0
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250 A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.055
0.075
V
GS
=10V, I
D
=3.6A
V
GS
=4.5V, I
D
=3A
Forward Transconductance
(1) (3)
g
fs
10.2
S
V
DS
=15V,I
D
=4.5A
DYNAMIC
(3)
Input Capacitance
C
iss
1063
pF
V
DS
=
30V
,
V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
104
pF
Reverse Transfer Capacitance
C
rss
64
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
3.8
ns
V
DD
=30V, I
D
=1A
R
G
6.0 , V
GS
=10V
Rise Time
t
r
4.0
ns
Turn-Off Delay Time
t
d(off)
26.2
ns
Fall Time
t
f
10.6
ns
Gate Charge
Q
g
11.0
nC
V
DS
=30V,V
GS
=5V,
I
D
=4.5A
Total Gate Charge
Q
g
20.4
nC
V
DS
=30V,V
GS
=10V,
I
D
=4.5A
Gate-Source Charge
Q
gs
4.1
nC
Gate-Drain Charge
Q
gd
5.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85
0.95
V
T
J
=25C, I
S
=5.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
22.0
ns
T
J
=25C, I
F
=2.2A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
21.4
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN6A25DN8
PROVISIONAL ISSUE B - JUNE 2003
5
S E M I C O N D U C T O R S
TYPICAL CHARACTERISTICS
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