SUMMARY
V
(BR)DSS
=-200V; R
DS(ON)
= 25 ; I
D
= 200mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
FEATURES
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
SOT223 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMP2120G4TA
7
12mm embossed
1,000 units
ZXMP2120G4TC
13
12mm embossed
4,000 units
DEVICE MARKING
ZXMP
2120
ZXMP2120G4
ISSUE 1 - DECEMBER 2005
200V P-CHANNEL ENHANCEMENT MODE MOSFET
1
N/C
PINOUT - TOP VIEW
SOT223
ZXMP2120G4
ISSUE 1 - DECEMBER 2005
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
-200
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
=10V; T
amb
=25C)
(a)
I
D
-
200
mA
Pulsed Drain Current
(c)
I
DM
-1.2
A
Pulsed Source Current (Body Diode)
(c)
I
SM
-1.2
A
Power Dissipation at T
amb
=25C
(a)
Linear derating factor
P
tot
2.0
1.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
62.5
C/W
Junction to Ambient
(b)
R
JA
32
C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ZXMP2120G4
ISSUE 1 - DECEMBER 2005
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Drain-Source
Breakdown Voltage
BV
DSS
-200
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
20
nA
V
GS
=
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
A
A
V
DS
=-200 V, V
GS
=0V
V
DS
=-160 V, V
GS
=0V,
T=125C
(2)
On-State Drain Current
(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
25
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance
(2)
C
iss
100
pF
Common Source Output
Capacitance
(2)
C
oss
25
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
7
pF
Turn-On Delay Time
(2)(3)
t
d(on)
7
ns
V
DD
-25V, I
D
=-150mA
Rise Time
(2)(3)
t
r
15
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
12
ns
Fall Time
(2)(3)
t
f
15
ns
(1) Measured under pulsed conditions. Width=300
s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
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