S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= -60V: R
DS(on)
= 0.125 : I
D
= -4.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
DEVICE MARKING
ZXMP
6A17
ZXMP6A17G
1
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 1 - MAY 2005
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A17GTA
7"
12mm
1000 units
ZXMP6A17GTC
13"
12mm
4000 units
ORDERING INFORMATION
Top View
PINOUT
SOT223
ZXMP6A17G
S E M I C O N D U C T O R S
2
ISSUE 1 - MAY 2005
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-60
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
= -10V; T
A
=25C)
(b)
(V
GS
= -10V; T
A
=70C)
(b)
(V
GS
= -10V; T
A
=25C)
(a)
I
D
-4.1
-3.3
-3.0
A
Pulsed Drain Current
(c)
I
DM
-13.7
A
Continuous Source Current (Body Diode)
(b)
I
S
-4.8
A
Pulsed Source Current (Body Diode)
(c)
I
SM
-13.7
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
62.5
C/W
Junction to Ambient
(b)
R
JA
32.2
C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXMP6A17G
S E M I C O N D U C T O R S
3
ISSUE 1 - MAY 2005
1
10
100
10m
100m
1
10
Single Pulse
T
amb
=25C
R
DS(on)
Limited
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
0
20
40
60
80
100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (C)
M
a
x
Pow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
100
1m
10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
T
amb
=25C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Pulse Width (s)
100
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25C
Pulse Power Dissipation
Pulse Width (s)
M
axi
m
u
m
P
o
w
er
(
W
)
CHARACTERISTICS
ZXMP6A17G
S E M I C O N D U C T O R S
ISSUE 1 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-60
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.125
0.190
V
GS
=-10V, I
D
=-2.2A
V
GS
=-4.5V, I
D
=-1.8A
Forward Transconductance
(1)(3)
g
fs
4.7
S
V
DS
=-15V,I
D
=-2.2A
DYNAMIC
(3)
Input Capacitance
C
iss
637
pF
V
DS
=-30V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
70
pF
Reverse Transfer Capacitance
C
rss
53
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
, V
GS
=-10V
Rise Time
t
r
3.4
ns
Turn-Off Delay Time
t
d(off)
26.2
ns
Fall Time
t
f
11.3
ns
Gate Charge
Q
g
9.8
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-2.2A
Total Gate Charge
Q
g
17.7
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-2.2A
Gate-Source Charge
Q
gs
1.6
nC
Gate-Drain Charge
Q
gd
4.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
J
=25 C, I
S
=-2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
25.1
ns
T
J
=25 C, I
F
=-1.7A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
27.2
nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP6A17G
S E M I C O N D U C T O R S
5
ISSUE 1 - MAY 2005
TYPICAL CHARACTERISTICS
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