1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 75V : R
SAT
= 70m
typical; I
C
= 5A
DESCRIPTION
Packaged in the D-Pak outline this high current high gain 75V NPN transistor
offers low on state losses making it ideal for use in DC-DC circuits and various
driving and power management functions.
FEATURES
5 amps continuous current
Up to 10 amps peak current
Low equivalent on resistance
Low saturation voltages
High h
FE
(300 min @ 1A)
APPLICATIONS
DC - DC converters
DC - DC modules
Power switches
Motor control
Automotive circuits
Inverter circuits
DEVICE MARKING
ZXT1053A
ZXT1053AK
ISSUE 2 - DECEMBER 2003
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXT1053AKTC
13"
16mm
2500 units
ORDERING INFORMATION
PINOUT
TOP VIEW
DPAK
ZXT1053AK
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
59
C/W
Junction to ambient
(b)
R
JA
36
C/W
Junction to ambient
(c)
R
JA
28
C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
150
V
Collector-emitter voltage
BV
CEO
75
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(b)
I
C
5
A
Peak pulse current
I
CM
10
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
3.4
27.4
W
mW/C
Power dissipation at T
A
=25C
(c)
Linear derating factor
P
D
4.4
9.3
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXT1053AK
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
150
240
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CES
150
240
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CEO
75
90
V
I
C
=10mA*
Collector-emitter breakdown voltage
BV
CEV
150
240
V
I
C
=1 A, V
EB
=1V
Emitter-base breakdown voltage
BV
EBO
7
8.7
V
I
E
=100 A
Collector cut-off current
I
CBO
1
10
nA
V
CB
=120V
Collector cut-off current
I
CES
1
10
nA
V
CES
=120V
Emitter cut-off current
I
EBO
1
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
19
70
120
140
350
30
95
160
190
460
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=20mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=200mA*
Base-emitter saturation voltage
V
BE(SAT)
1.0
1.1
mV
I
C
=5A, I
B
=200mA*
Base-emitter turn-on voltage
V
BE(ON)
0.925
1.05
mV
I
C
=5A, V
CE
=2V*
Static forward current transfer ratio
H
FE
260
300
50
10
375
450
75
25
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition frequency
f
T
140
MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output capacitance
C
OBO
21
30
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
162
900
nS
nS
I
C
=2A, V
CC
=50V,
I
B1
=I
B2
=20mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
PDF 
ZIP
