ISSUE 1 - MARCH 2000
ZXT12N50DX
SuperSOT4TM
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 45m ; I
C
= 3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=3A Continuous Collector Current
MSOP8 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT12N50DXTA
7
12mm embossed
1000 units
ZXT12N50DXTC
13
12mm embossed
4000 units
DEVICE MARKING
T12N50DX
Top View
1
MSOP8
1
2
3
4
8
7
6
5
E1
E2
B1
B2
C1
C2
C2
C1
C1
E1
B1
C2
E2
B2
ISSUE 1 - MARCH 2000
ZXT12N50DX
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
143
C/W
Junction to Ambient (b)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
120
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
7.5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at TA=25C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/C
Power Dissipation at TA=25C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/C
Power Dissipation at TA=25C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - MARCH 2000
ZXT12N50DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
100
200
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
8.5
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=80V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=80V
Collector-Emitter Saturation
Voltage
V
CE(sat)
11
95
190
135
13
120
250
175
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=3A, I
B
=300mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.9
0.95
V
I
C
=3A, I
B
=50mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.83
0.9
V
I
C
=3A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
250
300
150
50
400
450
250
100
900
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency
f
T
132
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
26
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
115
ns
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=20mA
Turn-Off Time
t
(off)
1000
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
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