ISSUE 1 - MARCH 2000
ZXT12P20DX
SuperSOT4TM
DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-20V; R
SAT
= 64m ; I
C
= -2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=2.5A Continuous Collector Current
MSOP8 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT12P20DXTA
7
12mm embossed
1000 units
ZXT12P20DXTC
13
12mm embossed
4000 units
DEVICE MARKING
T12P20DX
Top View
1
MSOP8
1
2
3
4
8
7
6
5
E1
E2
B1
B2
C1
C2
C2
C1
C1
E1
B1
C2
E2
B2
ISSUE 1 - MARCH 2000
ZXT12P20DX
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
143
C/W
Junction to Ambient (b)(d)
R
JA
100
C/W
Junction to Ambient (a)(e)
R
JA
120
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current
I
CM
-10
A
Continuous Collector Current
I
C
-2.5
A
Base Current
I
B
-500
mA
Power Dissipation at TA=25C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/C
Power Dissipation at TA=25C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/C
Power Dissipation at TA=25C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - MARCH 2000
ZXT12P20DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-25
-65
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-20
-55
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-20V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-20V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-12
-95
-160
-16
-125
-200
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=20mA*
I
C
=-2.5A, I
B
=-125mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.95
-1.0
V
I
C
=-2.5A, I
B
=-125mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.8
-0.85
V
I
C
=-2.5A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
200
50
450
450
350
80
900
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
Transition Frequency
f
T
110
MHz
I
C
=-50mA, V
CE
=-10V
f=-50MHz
Output Capacitance
C
obo
45
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
90
ns
V
CC
=-10V, I
C
=-2A
I
B1
=I
B2
=-40mA
Turn-Off Time
t
(off)
325
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
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