ISSUE 1 - MARCH 2000
ZXT14P12DX
SuperSOT4TM
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 16m ; I
C
= -6A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 20A
I
C
=6A Continuous Collector Current
MSOP8 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT14P12DXTA
7
12mm embossed
1000 units
ZXT14P12DXTC
13
12mm embossed
4000 units
DEVICE MARKING
T14P12DX
Top View
1
MSOP8
C
E
B
3
2
1
4
8
7
6
5
E
E
E
B
C
C
C
C
ISSUE 1 - MARCH 2000
ZXT14P12DX
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
70
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10secs
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current
I
CM
-40
A
Continuous Collector Current
I
C
-6
A
Base Current
I
B
-500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - MARCH 2000
ZXT14P12DX
3
CHARACTERISTICS
ISSUE 1 - MARCH 2000
ZXT14P12DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-20
-36
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-16V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-16V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-3
-40
-20
-125
-95
-5
-50
-30
-165
-115
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-6A, I
B
=-60mA*
I
C
=-6A, I
B
=-300mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.9
V
I
C
=-6A, I
B
=-60mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.85
V
I
C
=-6A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
250
75
500
450
400
150
900
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
110
MHz
I
C
=-300mA, V
CE
=-10V
f=30MHz
Output Capacitance
C
obo
205
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
158
ns
V
CC
=-6V, I
C
=-6A
I
B1
=I
B2
=-150mA
Turn-Off Time
t
(off)
190
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
ISSUE 1 - MARCH 2000
ZXT14P12DX
5
TYPICAL CHARACTERISTICS
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