ISSUE 1 - MARCH 2000
ZXT14P40DX
SuperSOT4TM
40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-40V; R
SAT
= 26m ; I
C
= -4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 8A
I
C
=4A Continuous Collector Current
MSOP8 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT14P40DXTA
7
12mm embossed
1000 units
ZXT14P40DXTC
13
12mm embossed
4000 units
DEVICE MARKING
T14P40DX
Top View
1
MSOP8
3
2
1
4
8
7
6
5
E
E
E
B
C
C
C
C
C
E
B
ISSUE 1 - MARCH 2000
ZXT14P40DX
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
70
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current (c)
I
CM
-12
A
Continuous Collector Current
I
C
-4
A
Base Current
I
B
-500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - MARCH 2000
ZXT14P40DX
3
CHARACTERISTICS
ISSUE 1 - MARCH 2000
ZXT14P40DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50
-110
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-40
-90
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-40V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-40V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-10
-100
-45
-105
-130
-15
-125
-55
-130
-160
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-4A, I
B
=-200mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-1.0
V
I
C
=-4A, I
B
=-200mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.85
V
I
C
=-4A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
200
50
500
450
380
100
900
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
Transition Frequency
f
T
185
MHz
I
C
=-300mA, V
CE
=-10V
f=-30MHz
Output Capacitance
C
obo
95
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
130
ns
V
CC
=-10V, I
C
=-4A
I
B1
=I
B2
=-100mA
Turn-Off Time
t
(off)
435
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
ISSUE 1 - MARCH 2000
ZXT14P40DX
5
TYPICAL CHARACTERISTICS
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