1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= -60V : R
SAT
= 53m
typical; I
C
= -6A
DESCRIPTION
Packaged in the D-PAK outline this high current high performance 60V PNP
transistor offers low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
6 amps continuous current
Up to 15 amps peak current
Low equivalent on resistance
Low saturation voltages
APPLICATIONS
DC - DC converters
DC - DC modules
Power switches
Motor control
Automotive circuits
Inverter circuits
DEVICE MARKING
ZXT951
ZXT951K
ISSUE 2 - DECEMBER 2003
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXT951KTC
13"
16mm
2500 units
ORDERING INFORMATION
PINOUT
TOP VIEW
DPAK
ZXT951K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
59
C/W
Junction to ambient
(b)
R
JA
39
C/W
Junction to ambient
(c)
R
JA
30
C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-100
V
Collector-base voltage
BV
CER
-100
V
Collector-emitter voltage
BV
CEO
-60
V
Emitter-base voltage
BV
EBO
-7
V
Peak pulse current
I
CM
-15
A
Continuous collector current
(b)
I
C
-6
A
Base current
I
B
-0.5
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
3.2
25.6
W
mW/C
Power dissipation at T
A
=25C
(c)
Linear derating factor
P
D
4.2
33.6
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXT951K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
-100
-125
V
I
C
=-100 A
Collector-emitter breakdown voltage
BV
CER
-100
-125
V
I
C
=-100 A, R
BE
=
1k
Collector-emitter breakdown voltage
BV
CEO
-60
-80
V
I
C
=-10mA*
Emitter-base breakdown voltage
BV
EBO
-7
-8.1
V
I
E
=-100 A
Collector cut-off current
I
CBO
1
-20
nA
V
CB
=-80V
Collector cut-off current
I
CER
1
-20
nA
V
CB
=-80V, R
BE
=
1k
Emitter cut-off current
I
EBO
1
-10
nA
V
EB
=-6V
Collector-emitter saturation voltage
V
CE(SAT)
-13
-60
-115
-315
-25
-90
-165
-400
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-6A, I
B
=-600mA*
Base-emitter saturation voltage
V
BE(SAT)
-1.05
-1.2
mV
I
C
=-6A, I
B
=-600mA*
Base-emitter turn-on voltage
V
BE(ON)
-0.92
-1.05
mV
I
C
=-6A, V
CE
=-1V*
Static forward current transfer ratio
H
FE
100
100
50
15
230
200
110
40
300
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-6A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
Transition frequency
f
T
120
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
Output capacitance
C
OBO
74
pF
V
CB
=-10V, f=1MHz*
Switching times
t
ON
t
OFF
82
350
nS
nS
I
C
=-2A, V
CC
=-10V,
I
B1
=I
B2
=-200mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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