SUMMARY
V
CEO
= 20V; R
SAT
= 47m ; I
C
= 4.5A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (150mV @1A)
h
FE
specified up to 6A
I
C
= 4.5A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters (FET Drivers)
Power switches
Motor control
LED backlighting
DEVICE MARKING
SB
ZXTBM322
ISSUE 2 - JUNE 2002
1
MPPSTM Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTBM322TA
7'`
8mm
3000 units
ZXTBM322TC
13'`
8mm
10000 units
ORDERING INFORMATION
2mm x 2mm Single MLP
underside view
PINOUT
2mm x 2mm MLP
(single die)
B
C
E
ZXTBM322
ISSUE 2 - JUNE 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
83
C/W
Junction to Ambient (b)
R
JA
51
C/W
Junction to Ambient (d)
R
JA
125
C/W
Junction to Ambient (e)
R
JA
42
C/W
THERMAL RESISTANCE
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300C/W giving a power rating of Ptot=420mW.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
7.5
V
Peak Pulse Current (c)
I
CM
12
A
Continuous Collector Current (a)
I
C
4.5
A
Continuous Collector Current (b)
I
C
5
A
Base Current
I
B
1000
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.5
12
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
2.45
19.6
W
mW/C
Power Dissipation at TA=25C (d)
Linear Derating Factor
P
D
1
8
W
mW/C
Power Dissipation at TA=25C (e)
Linear Derating Factor
P
D
3
24
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXTBM322
ISSUE 2 - JUNE 2002
3
0.1
1
10
0.01
0.1
1
10
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100
1m
10m 100m
1
10
100
1k
0
20
40
60
80
0.1
1
10
100
0
25
50
75
100
125
150
175
200
225
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100us
100ms
1s
V
CE(SAT)
Limited
1ms
Safe Operating Area
Single Pulse, T
amb
=25C
DC
10ms
I
C
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
V
CE
Collector-Emitter Voltage (V)
1oz Cu
Note: a
2oz Cu
Note: e
Derating Curve
T
amb
=25C
M
a
x
Pow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
Temperature (C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Pulse Width (s)
Thermal Resistance v Board Area
1oz copper
2oz copper
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Board Cu Area (sqcm)
1oz copper
2oz copper
Power Dissipation v Board Area
T
amb
=25C
T
j max
=150C
Continuous
P
D
D
i
s
s
i
pa
t
i
on
(
W
)
Board Cu Area (sqcm)
TYPICAL CHARACTERISTICS
ZXTBM322
ISSUE 2 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
40
100
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
20
27
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
8.2
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
25
nA
V
CB
=32V
Emitter Cut-Off Current
I
EBO
25
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
25
nA
V
CES
=16V
Collector-Emitter Saturation
Voltage
V
CE(sat)
8
90
115
190
210
15
150
135
250
270
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
I
C
=4.5A, I
B
=125mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.98
1.05
V
I
C
=4.5A, I
B
=125mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.88
0.95
V
I
C
=4.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
200
100
400
450
360
180
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
100
140
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
23
30
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
170
ns
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=10mA
Turn-Off Time
t
(off)
400
ns
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZXTBM322
ISSUE 2 - JUNE 2002
5
1m
10m
100m
1
10
1m
10m
100m
1m
10m
100m
1
10
0.00
0.05
0.10
0.15
0.20
0.25
1m
10m
100m
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
0
90
180
270
360
450
540
630
V
CE(SAT)
v I
C
Tamb=25C
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
V
BE(SAT)
v I
C
I
C
/I
B
=50
100C
25C
-55C
V
CE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
h
FE
v I
C
V
CE
=2V
-55C
25C
100C
N
o
r
m
a
lis
e
d
G
a
in
I
C
Collector Current (A)
25C
V
CE(SAT)
v I
C
I
C
/I
B
=50
100C
-55C
V
BE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
V
BE(ON)
v I
C
V
CE
=2V
100C
25C
-55C
V
B
E
(
ON)
(V
)
I
C
Collector Current (A)
Typ
i
c
a
l
G
a
i
n
(
h
FE
)
TYPICAL CHARACTERISTICS
PDF 
ZIP