1
S E M I C O N D U C T O R S
SUMMARY
PNP
V
CEO
= -40V; R
SAT
= 104m ; I
C
= -3A
DESCRIPTION
Packaged in the new
innovative 3mm x 2mm MLP (Micro Leaded
Package)
outline, these new 4
th
generation low saturation dual PNP transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits and
various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-220mV max @1A)
h
FE
specified up to -3A
I
C
= -3A Continuous Collector Current
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters
Charging circuits
Power switches
Motor control
CCFL Backlighting
DEVICE MARKING
D33
ZXTD3M832
ISSUE 1 - JUNE 2003
MPPS
TM
Miniature Package Power Solutions
DUAL 40V PNP LOW SATURATION TRANSISTOR
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD3M832TA
7"
8mm
3000
ZXTD3M832TC
13"
8mm
10000
ORDERING INFORMATION
Underside view
MLP832
ZXTD3M832
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(f)
R
JA
83.3
C/W
Junction to Ambient
(b)(f)
R
JA
51
C/W
Junction to Ambient
(b)(f)
R
JA
125
C/W
Junction to Ambient
(d)(f)
R
JA
111
C/W
Junction to Ambient
(d)(g)
R
JA
73.5
C/W
Junction to Ambient
(e)(g)
R
JA
41.7
C/W
NOTES
(a) For a dual device surface mounted on
8
sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t 5 secs for a dual device surface mounted on
8
sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface mounted on
8
sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,
1mm wide tracks and one half of the device active is Rth= 250C/W giving a power rating of Ptot=500mW
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current
I
CM
-4
A
Continuous Collector Current
(a) (f)
I
C
-3
A
Base Current
I
B
-1000
mA
Power Dissipation at TA=25C
(a)(f)
Linear Derating Factor
P
D
1.5
12
W
mW/ C
Power Dissipation at TA=25C
(b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/ C
Power Dissipation at TA=25C
(c)(f)
Linear Derating Factor
P
D
1
8
W
mW/ C
Power Dissipation at TA=25C
(d)(f)
Linear Derating Factor
P
D
1.13
9
W
mW/ C
Power Dissipation at TA=25C
(d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/ C
Power Dissipation at TA=25C
(e)(g)
Linear Derating Factor
P
D
3
24
W
mW/ C
Operating & Storage Temperature Range
T
j
:T
stg
-55 to +150
C
Junction Temperature
T
j
150
C
ABSOLUTE MAXIMUM RATINGS
ZXTD3M832
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
-80
V
I
C
=-100 A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
-70
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-25
nA
V
CB
=-40V
Emitter Cut-Off Current
I
EBO
-25
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-25
nA
V
CES
=-32V
Collector-Emitter Saturation Voltage
V
CE(sat)
-25
-150
-195
-210
-260
-40
-220
-300
-300
-370
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-2.5A, I
B
=-250mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.97
-1.05
V
I
C
=-2.5A, I
B
=-250mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.89
-0.95
V
I
C
=-2.5A, V
CE
=-2V*
Static Forward Current Transfer Ratio
h
FE
300
300
180
60
12
480
450
290
130
22
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-1.5A, V
CE
=2V*
I
C
=-3A, V
CE
=-2V*
Transition Frequency
f
T
150
190
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
19
25
pF
V
CB
=-10A, f=1MHz
Turn-On Time
t
(on)
40
ns
V
CC
=-15V, I
C
=-0.75A
I
B1
=I
B2
=-15mA
Turn-Off Time
t
(off)
435
ns
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%
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