ZXTD4591E6
ISSUE 1 - JULY 2000
DEVICE MARKING
4591
DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
SUMMARY
NPN: V
CEO
=60V; I
C
= 1A; h
FE
=100-300
PNP: V
CEO
=-60V; I
C
= -1A; h
FE
=100-300
DESCRIPTION
Complementary NPN and PNP medium power transistors packaged in the 6
lead SOT23 package.
FEATURES
Low Equivalent On Resistance
- NPN
R
CE(sat)
210m
at 1A
- PNP
R
CE(sat)
355m
at -1A
Low Saturation Voltage
h
FE
characterised up to 2A
I
C
=1A Continuous Collector Current
SOT23-6 package
APPLICATIONS
MOSFET gate driver
Low Power Motor Drive
Low Power DC-DC Converters
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXTD4591E6TA
7
8mm embossed
3000 units
ZXTD4591E6TC
13
8mm embossed
10000 units
Top View
1
SOT23-6
E2
B2
E1
C2
B1
C1
45
91
C1
E1
B1
C2
E2
B2
ISSUE 1 - JULY 2000
ZXTD4591E6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT NPN
LIMIT PNP
UNIT
Collector-Base Voltage
V
CBO
80
-80
V
Collector-Emitter Voltage
V
CEO
60
-60
V
Emitter-Base Voltage
V
EBO
5
-5
V
Peak Pulse Current
I
CM
2
-2
A
Continuous Collector Current
I
C
1
-1
A
Base Current
I
B
500
-500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.1
8.8
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
1.7
13.6
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
-55 to +150
C
ISSUE 1 - JULY 2000
ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-80
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-60
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-60V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-60V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.3
-0.6
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-1.2
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition Frequency
f
T
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
3
ISSUE 1 - JULY 2000
ZXTD4591E6
NPN
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
80
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
60
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=60V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=60V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
1.1
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
ISSUE 1 - JULY 2000
ZXTD4591E6
NPN TYPICAL CHARACTERISTICS
5
V
CE(
s
a
t
)
-(V)
10A
1A
10mA
100mA
1mA
-55 C
+25 C
+100 C
I
C
/I
B
=10
V
CE(sat)
v I
C
I
C-
Collector Current
I
C
-Collector Current
V
BE(sat)
v I
C
V
BE(
s
a
t
)
-(
V
)
0
0.2
100mA
10mA
0.4
0.6
0.8
1.2
1.0
1.4
10A
1A
h
FE
V I
C
I
C
-Collector Current
1mA
100mA
10mA
10A
1A
h
FE
-
T
y
p
ic
al
G
a
in
60
0
180
120
300
10mA
1mA
I
C
-Collector Current
V
BE(on)
v I
C
100mA
1A
10A
V
BE(
o
n)
-(
V
)
0.6
0.8
1.0
1.2
0.4
0.2
0
I
C
-Collector Current
V
CE(sat)
v I
C
V
CE(
s
at
)
-(V)
1mA
0
0.1
100mA
10mA
+25 C
0.2
0.3
0.4
I
C
/I
B
=50
10A
1A
0.4
+100 C
-55 C
+25 C
+100 C
-55 C
+25 C
-55 C
+25 C
+100 C
I
C
/I
B
=10
V
CE
=5V
V
CE
=5V
I
C
-Coll
e
c
t
o
r
Cu
r
r
en
t
(
A
)
10
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
0.1
10
100
1s
DC
100ms
10ms
100
s
1ms
1
0
0.1
0.3
0.2
1mA
0.01
I
C
/I
B
=10
0.5
0.6
0.5
0.6
240
0.001
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