ZXTD6717E6
ISSUE 2 - JULY 2001
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS
SUMMARY
NPN: V
CEO
=15V; V
CE(sat)
=0.1V; I
C
= 1.5A;
PNP: V
CEO
=-12V; V
CE(sat)
=-0.175V; I
C
= -1.25A;
DESCRIPTION
This new combination device comprises a complementary NPN and PNP low
saturation transistor housed in the SOT23-6 package. Users benefit from very
efficient performance combining a high current operation, exceptionally low
V
CE(sat)
and high H
FE
resulting in extremely low on state losses. This dual transistor
is ideal for use in a variety of efficient driving functions including motors, lamps,
relays and solenoids and will also benefit circuits requiring high output current switching.
FEATURES
Low Saturation Voltage
R
CE(sat)
values
NPN =135m
at 1.5A
-
PNP =150m
at 1.25A
h
FE
min 200 at 1A
I
C
=1.5A Continuous (NPN), 1.25A (PNP)
SOT23-6 package with P
D
= 1.1W
APPLICATIONS
Various driving functions
Lamps
Motors
Relays and solenoids
High output current switches
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXTD6717E6TA
7
8mm embossed
3000 units
ZXTD6717E6TC
13
8mm embossed
10000 units
DEVICE MARKING
6717
Top View
1
SOT23-6
C1
E1
B1
C2
E2
B2
ISSUE 2 - JULY 2001
ZXTD6717E6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
125
C/W
Junction to Ambient (b)
R
JA
45
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT NPN
LIMIT PNP
UNIT
Collector-Base Voltage
V
CBO
15
-12
V
Collector-Emitter Voltage
V
CEO
15
-12
V
Emitter-Base Voltage
V
EBO
5
-5
V
Peak Pulse Current
I
CM
5
-3
A
Continuous Collector Current
I
C
1.5
-1.25
A
Base Current
I
B
200
-200
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.1
8.8
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
1.7
13.6
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
-55 to +150
C
ISSUE 2 - JULY 2001
ZXTD6717E6
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
15
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
15
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
10
nA
V
CB
=10V
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=4V
Collector Emitter Cut-Off Current
I
CES
10
nA
V
CES
=10V
Collector-Emitter Saturation
Voltage
V
CE(sat)
16.5
40
75
150
205
20
55
100
200
245
mV
mV
mV
mV
mV
I
C
=100mA, I
B
=10mA*
I
C
=250mA, I
B
=10mA*
I
C
=500mA, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1.5A, I
B
=20mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.93
1.1
V
I
C
=1.5A, I
B
=20mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.865
1.1
V
I
C
=1.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
250
200
75
30
420
450
390
300
150
75
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency
f
T
180
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
Turn-On Time
Turn-Off Time
t
(on)
t
(off)
50
250
ns
ns
I
C
=1A, V
CC
=10V
I
B1
=I
B2
=100mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
3
ISSUE 2 - JULY 2001
ZXTD6717E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-12
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-10
nA
V
CB
=-10V
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-4V
Collector Emitter Cut-Off Current
I
CES
-10
nA
V
CES
=-10V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-25
-55
-110
-160
-185
-40
-100
-175
-215
-240
mV
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA*
I
C
=-250mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.25A, I
B
=-100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.99
-1.10
V
I
C
=-1.25A, I
B
=-100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.85
-1.0
V
I
C
=-1.25A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
200
125
75
30
490
450
340
250
140
80
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1.25A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
Transition Frequency
f
T
220
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
Turn-On Time
Turn-Off Time
t
(on)
t
(off)
50
135
ns
ns
I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-100mA
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
ISSUE 2 - JULY 2001
ZXTD6717E6
NPN TYPICAL CHARACTERISTICS
5
1m
1m
1m
100m
100
1m
1m
I
C
- Collector Current (A)
V
CE(sat)
v I
C
0
V
CE(sat
)
-(
V
)
IC/IB=10
IC/IB=50
IC/IB=100
+25C
-55C
h
FE
-
T
ypical
G
a
in
+100C
0
I
C
- Collector Current (A)
h
FE
v I
C
V
BE(on)
-(
V
)
0
I
C
- Collector Current (A)
V
BE(on)
v I
C
+100C
+150C
V
CE(sat)
-(
V
)
+25C
0
I
C
- Collector Current (A)
V
CE(sat)
v I
C
+100C
+150C
V
BE(sat)
-(
V
)
+25C
0
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1s
100ms
I
C
-
C
ollector
Cur
r
e
nt
(A)
10
DC
10m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
+25C
-55C
IC/IB =50
VCE=2V
-55C
IC/IB =50
+25C
+150C
+100C
-55C
10m
100m
1
10
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
10m
100m
1
10
200
400
600
800
10m
100m
1
10
10m
100m
1
10
1.0
0.25
0.5
0.75
10m
100m
1
10
0.6
0.2
0.4
0.8
1.0
1
10
100m
1
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