S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 25V : R
SAT
= 25m ; I
C
= 5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 25V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
SAT
= 25m
at 6.5A
5.5 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent hFE characteristics up to 20 amps
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC modules
Backlight Inverters
DEVICE MARKING
869
ZXTN2005Z
ISSUE 2 - JUNE 2005
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
SOT89
PINOUT
TOP VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXTN2005ZTA
7"
12mm
embossed
1,000 units
ORDERING INFORMATION
ZXTN2005Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
60
V
Collector-emitter voltage
BV
CEO
25
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
5.5
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at TA=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to ambient
(a)
R
JA
83
C/W
Junction to ambient
(b)
R
JA
60
C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZXTN2005Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
3
CHARACTERISTICS
ZXTN2005Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
60
120
V
I
C
= 100 A
Collector-emitter breakdown voltage
BV
CER
60
120
V
I
C
= 1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
25
35
V
I
C
= 10mA*
Emitter base breakdown voltage
BV
EBO
7.0
8.1
V
I
E
= 100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
= 50V
V
CB
= 50V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
= 50V
V
CB
= 50V, T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
= 6V
Collector-emitter saturation voltage
V
CE(SAT)
25
30
45
105
160
35
45
70
130
200
mV
mV
mV
mV
mV
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 100mA*
I
C
= 1A, I
B
= 10mA*
I
C
= 2A, I
B
= 10mA*
I
C
= 6.5A, I
B
= 150mA*
Base-emitter saturation voltage
V
BE(SAT)
950
1050
mV
I
C
= 6.5A, I
B
= 150mA*
Base-emitter turn on voltage
V
BE(ON)
860
960
mV
I
C
= 6.5A, V
CE
= 1V*
Static forward current transfer ratio
h
FE
300
300
200
40
400
450
275
55
I
C
= 10mA, V
CE
= 1V*
I
C
= 1A, V
CE
= 1V*
I
C
= 7A, V
CE
= 1V*
I
C
= 20A, V
CE
= 1V*
Transition frequency
f
T
150
I
C
= 100mA, V
CE
= 10V
f=50MHz
Output capacitance
C
OBO
48
pF
V
CB
= 10V, f= 1MHz*
Switching times
t
ON
t
OFF
33
464
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZXTN2005Z
S E M I C O N D U C T O R S
ISSUE 2 - JUNE 2005
5
TYPICAL CHARACTERISTICS
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