Issue 1 - June 2006
1
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Zetex Semiconductors plc 2006
ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BV
CEO
> 12V
BV
ECO
> 4.5V
h
FE
> 500
I
C(cont)
= 6A
V
CE(sat)
< 32mV @ 1A
R
CE(sat)
= 23m
P
D
= 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
High power dissipation SOT23 package
High peak current
Very high gain
Low saturation voltage
6V reverse blocking voltage
Applications
MOSFET gate drivers
Power switches
Motor control
DC fans
DC-DC converters
Ordering information
Device marking
1C3
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN25012EFHTA
7
8 3,000
C
E
B
C
E
B
Pinout - top view
ZXTN25012EFH
Issue 1 - June 2006
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Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
12
V
Emitter-collector voltage (reverse blocking)
V
ECO
4.5
V
Emitter-base voltage
V
EBO
7
V
Continuous collector current
(c)
I
C
6
A
Base current
I
B
1
A
Peak pulse current
I
CM
15
A
Power dissipation at T
amb
=25C
(a)
Linear derating factor
P
D
0.73
5.84
W
mW/C
Power dissipation at T
amb
=25C
(b)
Linear derating factor
P
D
1.05
8.4
W
mW/C
Power dissipation at T
amb
=25C
(c)
Linear derating factor
P
D
1.25
9.6
W
mW/C
Power dissipation at T
amb
=25C
(d)
Linear derating factor
P
D
1.81
14.5
W
mW/C
Operating and storage temperature range
T
j
, T
stg
- 55 to 150
C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
JA
171
C/W
Junction to ambient
(b)
R
JA
119
C/W
Junction to ambient
(c)
R
JA
100
C/W
Junction to ambient
(d)
R
JA
69
C/W
ZXTN25012EFH
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Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
CBO
20
40
V
I
C
= 100 A
Collector-emitter breakdown
voltage (base open)
BV
CEO
12
17
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100 A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8.0
V
I
E
= 100 A, R
BC
< 1k or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
4.5
5.5
V
I
E
= 100 A,
Collector-base cut-off current I
CBO
<1
50
20
nA
A
V
CB
= 16V
V
CB
= 16V, T
amb
= 100C
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
28
32
mV
I
C
= 1A, I
B
= 100mA
(*)
45
55
mV
I
C
= 1A, I
B
= 10mA
(*)
60
75
mV
I
C
= 2A, I
B
= 40mA
(*)
160
190
mV
I
C
= 6A, I
B
= 120mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
920
1000
mV
I
C
= 6A, I
B
= 120mA
(*)
Base-emitter turn-on voltage
V
BE(on)
800
900
mV
I
C
= 6A, V
CE
= 2V
(*)
Static forward current
transfer ratio
h
FE
500
800
1500
I
C
= 10mA, V
CE
= 2V
(*)
500
750
I
C
= 1A, V
CE
= 2V
(*)
300
460
I
C
= 4A, V
CE
= 2V
(*)
40
55
I
C
= 15A, V
CE
= 2V
(*)
Transition frequency
f
T
260
MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
25.6
35
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
d
70.9
ns
V
CC
= 10V.
I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
r
69.8
ns
Storage time
t
s
233
ns
Fall time
t
f
71.6
ns
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