S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= -140V : R
SAT
= 85m ; I
C
= -3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 140V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
3 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
APPLICATIONS
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
DEVICE MARKING
955
ZXTP2014Z
ISSUE 2 - AUGUST 2005
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
SOT89
PINOUT
TOP VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXTP2014ZTA
7"
12mm
embossed
1,000 units
ORDERING INFORMATION
ZXTP2014Z
S E M I C O N D U C T O R S
ISSUE 2 - AUGUST 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-180
V
Collector-emitter voltage
BV
CEO
-140
V
Emitter-base voltage
BV
EBO
-7
V
Continuous collector current
(a)
I
C
-3
A
Peak pulse current
I
CM
-10
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at TA=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to ambient
(a)
R
JA
83
C/W
Junction to ambient
(b)
R
JA
60
C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZXTP2014Z
S E M I C O N D U C T O R S
ISSUE 2 - AUGUST 2005
3
CHARACTERISTICS
ZXTP2014Z
S E M I C O N D U C T O R S
ISSUE 2 - AUGUST 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
-180
-200
V
I
C
= -100 A
Collector-emitter breakdown voltage
BV
CER
-180
-200
V
I
C
= -1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
-140
-160
V
I
C
= -10mA*
Emitter-base breakdown voltage
BV
EBO
-7.0
-8.0
V
I
E
= -100 A
Collector cut-off current
I
CBO
1
-20
-0.5
nA
A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
1
-20
-0.5
nA
A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 C
Emitter cut-off current
I
EBO
1
-10
nA
V
EB
= -6V
Collector-emitter saturation voltage
V
CE(SAT)
-37
-50
-80
-255
-60
-75
-115
-330
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -5mA*
I
C
= -0.5A, I
B
= -50mA*
I
C
= -1A, I
B
= -100mA*
I
C
= -3A, I
B
= -300mA*
Base-emitter saturation voltage
V
BE(SAT)
-910
-1010
mV
I
C
= -3A, I
B
= -300mA*
Base-emitter turn on voltage
V
BE(ON)
-800
-900
mV
I
C
= -3A, V
CE
= -5V*
Static forward current transfer ratio
h
FE
100
100
45
225
200
100
5
300
I
C
= -10mA, V
CE
= -5V*
I
C
= -1A, V
CE
= -5V*
I
C
= -3A, V
CE
= -5V*
I
C
= -10A, V
CE
= -5V*
Transition frequency
f
T
120
MHz I
C
= -100mA, V
CE
= -10V
f=50MHz
Output capacitance
C
OBO
33
pF
V
CB
= -10V, f= 1MHz*
Switching times
t
ON
t
OFF
42
636
ns
I
C
= -1A, V
CC
= -50V,
I
B1
= -I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZXTP2014Z
S E M I C O N D U C T O R S
ISSUE 2 - AUGUST 2005
5
TYPICAL CHARACTERISTICS
ZXTP2014Z
S E M I C O N D U C T O R S
6
ISSUE 2 - AUGUST 2005
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 Mnchen
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Zetex Semiconductors plc 2005
PACKAGE OUTLINE
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
c
0.28
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
PACKAGE DIMENSIONS
PDF 
ZIP