Issue 3 - November 2005
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Zetex Semiconductors plc 2005
ZXTP2041F
SOT23 40 volt PNP silicon planar medium power
transistor
Summary
V
(BR)CEO
> -40V
I
c(cont)
= -1A
V
ce(sat)
< -500mV @ -1A
Complementary type
ZXTP2041F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
Low saturation voltage for reduced power dissipation
1 to 2 amp high current capability
Pb-free
SOT23 package
Applications
Power MOSFET gate driving
Low loss power switching
Ordering information
Device marking
P41
Device
Reel size
Tape width
Quantity per reel
ZXTP2041FTA
7"
8mm
3,000
ZXTP2041FTC
13"
8mm
10,000
Pin out - top view
ZXTP2041F
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Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
-40
V
Collector-emitter voltage
V
CEO
-40
V
Emitter-base voltage
V
EBO
-5.0
V
Peak pulse current
I
CM
-2
A
Continuous collector current
*
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
I
C
-1
A
Peak base current
I
BM
-1
A
Power dissipation @ T
A
=25C
*
P
D
350
mW
Operating and storage temperature
T
j
:T
stg
-55 to +150
C
ZXTP2041F
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Electrical characteristics (@T
AMB
= 25C)
Parameter
Symbol
Min.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
-40
V
I
C
=-100 A
Collector-emitter breakdown
voltage
V
(BR)CEO
-40
V
I
C
=-10mA
*
NOTES:
* Measured under pulsed conditions. Pulse width=300 S. Duty cycle 2%
Spice parameter data is available upon request for this device
Emitter-base breakdown
voltage
V
(BR)EBO
-5
V
I
E
=-100 A
Collector-emitter cut-off current
I
CES
-100
nA
V
CE
=-30V
Collector-base cut-off current
I
CBO
-100
nA
V
CB
=-30V
Emitter-base cut-off current
I
EBO
-100
nA
V
EB
=-4V
Static forward current transfer
ratio
h
FE
300
300
250
160
30
800
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
*
I
C
=-500mA, V
CE
=-5V
*
I
C
=-1A, V
CE
=-5V
*
I
C
=-2A, V
CE
=-5V
*
Collector-emitter saturation
voltage
V
CE(sat)
-0.2
-0.3
-0.5
V
V
V
I
C
=-100mA, I
B
=-1mA
*
I
C
=-500mA, I
B
=-20mA
*
I
C
=-1A, I
B
=-100mA
*
Base-emitter saturation voltage
V
BE(sat)
-1.1
V
I
C
=-1A, I
B
=-50mA
*
Base-emitter turn-on voltage
V
BE(on)
-1.0
V
I
C
=-1A, V
CE
=-5V
*
Transition frequency
f
T
150
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
ZXTP2041F
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Zetex Semiconductors plc 2005
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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 Mnchen
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Zetex Inc
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia Ltd)
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
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Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Packaging details - SOT23
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
Max.
Max.
A
2.67
3.05
0.105
0.120
H
0.33
0.51
0.013
0.020
B
1.20
1.40
0.047
0.055
K
0.01
0.10
0.0004
0.004
C
-
1.10
-
0.043
L
2.10
2.50
0.083
0.0985
D
0.37
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
F
0.085
0.15
0.0034
0.0059
N
0.95 Nom.
0.0375 Nom.
G
1.90 Nom.
0.075 Nom.
-
-
-
-
-
L
N
H
G
A
C
F
B
M
K
D
3 leads
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