Issue 2 - February 2006
1
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Zetex Semiconductors plc 2006
ZXTP25040DFH
40V SOT23 PNP medium power transistor
Summary
BV
CEO
> -40V
BV
ECO
> -3V ;
I
C(CONT)
= -3A
R
CE(sat)
= 55 m ;
V
CE(sat)
< -85mV @ 1A ;
P
D
= 1.25W
Complementary part number ZXTN25040DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
High power dissipation SOT23 package
High peak current
Low saturation voltage
7V reverse blocking voltage
Applications
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
High side driver
Ordering information
Device marking
024
Device
Reel size
(inches)
Tape width
Quantity per reel
ZXTP25040DFHTA
7
8mm
3000
C
E
B
C
E
Pinout - top view
B
ZXTP25040DFH
Issue 2 - February 2006
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Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5sec.
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
-45
V
Collector-emitter voltage (forward blocking)
V
CEO
-40
V
Emitter-collector voltage (reverse blocking)
V
ECO
-3
V
Emitter-base voltage
V
EBO
-7
V
Continuous collector current
(b)
I
C
-3
A
Peak pulse current
I
CM
-9
A
Power dissipation at T
A
=25C
(a)
linear derating factor
P
D
0.73
5.84
W
mW/C
Power dissipation at T
A
=25C
(b)
linear derating factor
P
D
1.05
8.4
W
mW/C
Power dissipation at T
A
=25C
(c)
linear derating factor
P
D
1.25
9.6
W
mW/C
Power dissipation at T
A
=25C
(d)
linear derating factor
P
D
1.81
14.5
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
JA
171
C/W
Junction to ambient
(b)
R
JA
119
C/W
Junction to ambient
(c)
R
JA
100
C/W
Junction to ambient
(d)
R
JA
69
C/W
ZXTP25040DFH
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Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-45
-75
V
I
C
= -100 A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-40
-65
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECO
-3
-8.7
V
I
E
= -100uA
(*)
Emitter-base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100 A
Collector cut-off current
I
CBO
<-1
-50
-20
nA
A
V
CB
= -36V
V
CB
= -36V, T
amb
= 100C
Emitter cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-170
-260
mV
I
C
= -1A, I
B
= -20mA
(*)
-65
-85
mV
I
C
= -1A, I
B
= -100mA
(*)
-165
-220
mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-930
-1000
mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter turn-on voltage V
BE(on)
-830
-900
mV
I
C
= -3A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
300
450
900
I
C
= -10mA, V
CE
= -2V
(*)
200
300
I
C
= -1A, V
CE
= -2V
(*)
30
60
I
C
= -3A, V
CE
= -2V
(*)
Transition frequency
f
T
270
MHz
I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance
C
OBO
17.4
pF
V
CB
= -10V, f
= 1MHz
(*)
Turn-on time
t
(on)
75.5
ns
V
CC
= -15V. I
C
= -750mA,
I
B1
= I
B2
= -15mA.
Turn-off time
t
(off)
320
ns
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