ZXTS1000E6
ISSUE 1 - NOVEMBER 2000
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: V
CEO
=-12V, I
C
= -1.25A
Schottky Diode: V
R
=40V; I
C
= 0.5A
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
FEATURES
Low Saturation Transistor
High Gain - 300 minimum
Low V
F
, fast switching Schottky
APPLICATIONS
Mobile telecomms, PCMCIA & SCSI
DC-DC Conversion
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXTS1000E6TA
7
8mm embossed
3000 units
ZXTS1000E6TC
13
8mm embossed
10000 units
DEVICE MARKING
1000
Top View
1
SOT23-6
ISSUE 1 - NOVEMBER 2000
ZXTS1000E6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
single die "on"
both die "on"
R
JA
R
JA
138
113
C/W
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Transistor
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-1.25
A
Schottky Diode
Continuous Reverse Voltage
V
R
40
V
Forward Current
I
F
0.5
A
Non Repetitive Forward Current t
100
s
t
10ms
I
FSM
6.75
3
A
A
Package
Power Dissipation at T
amb
=25C
single die "on"
both die "on"
P
D
0.725
0.885
W
W
Storage Temperature Range
T
stg
-55 to +150
C
Junction Temperature
T
j
125
C
ISSUE 1 - NOVEMBER 2000
ZXTS1000E6
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V
(BR)CBO
-12
V
I
C
= -100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
V
I
C
= -10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
V
I
E
= -100
A
Collector Cut-Off Current
I
CBO
-10
nA
V
CB
=-10V
Emitter Cut-Off Current
I
EBO
-10
nA
V
EB
=-4V
Collector Emitter Cut-Off Current
I
CES
-10
nA
V
CES=-10V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-25
-55
-110
-160
-185
-40
-100
-175
-215
-240
mV
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA*
I
C
= -0.25A, I
B
=-10 mA*
I
C
= -0.5A, I
B
=-10 mA*
I
C
= -1A, I
B
= -50mA*
I
C
= -1.25A, I
B
= -100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-990
-1100
mV
I
C
= -1.25A, I
B
= -100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-850
-1000
mV
I
C
= -1.25A, V
CE
= 2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
200
125
75
30
490
450
340
250
140
80
I
C
= -10mA, V
CE
=-2V*
I
C
= -0.1A, V
CE
= -2V*
I
C
= -0.5A, V
CE
= -2V*
I
C
= -1.25A, V
CE
=-2V*
I
C
= -2A, V
CE
= -2V*
I
C
= -3A, V
CE
= -2V*
Transition Frequency
f
T
220
MHz
I
C
= -50mA, V
CE
=-10 V
f= 100MHz
Output Capacitance
C
obo
15
pF
V
CB
= -10V, f=1MHz
Turn-On Time
t
(on)
50
ns
V
CC
= -10V, I
C
=-1A
I
B1
=I
B2
=-100mA
Turn-Off Time
t
(off)
135
ns
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)R
40
60
V
I
R
=200A
Forward Voltage
V
F
270
300
370
425
550
640
810
300
350
460
550
670
780
1050
mV
mV
mV
mV
mV
mV
mV
I
F
=50mA*
I
F
=100mA*
I
F
=250mA*
I
F
=500mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
Reverse Current
I
R
15
40
A
V
R
=30V
Diode Capacitance
C
D
20
pF
f=1MHz,V
R
=30V
Reverse Recovery Time
t
rr
10
ns
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions.
PDF 
ZIP
