Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC848A,B,C
1
2
1
2
3
3
SOT-23
Rating
Symbol
Value
Unit
Characteristic
Collector-Emitter Voltage
V
CEO
30
Vdc
Collector-Base Voltage
V
CBO
30
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current-Continuous
I
C
100
mAdc
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
P
D
225
1.8
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
P
D
300
2.4
mW
mW /
o
C
Thermal Resistance Junction to Ambient
556
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient
417
o
C / W
R
JA
Junction and Storage Temperature
Collector-Emitter Breakdowe Voltage
( I
C
=10 uA, V
EB
=0 )
Collector-Base Breakdowe Voltage
( I
C
=10 uA )
Collector-Emitter Breakdowe Voltage
( I
C
=10mA )
Emitter-Base Breakdowe Voltage
( I
E
=1.0 uA )
Symbol
V
(BR)CES
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Min.
30
30
30
5.0
-
-
Max.
-
-
-
-
15
5.0
Typ.
-
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Collector Cutoff Current
( V
CB
=30 V )
( V
CB
=30 V, T
A
= 150
o
C )
BC848A=1J; BC848B=1K; BC848C=1L
-55 to +150
o
C
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
Characteristic
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain
( I
C
= 10 uA, V
CE
=
5.0 V )
( I
C
= 2.0 mA, V
CE
=
5.0 V )
Collector-Emitter Saturation Voltage
( I
C
= 10 mA, I
B
= 0.5 mA )
( I
C
= 100 mA, I
B
= 5.0 mA )
Base-Emitter Saturation Voltage
( I
C
= 10 mA, I
B
= 0.5 mA )
( I
C
= 100 mA, I
B
= 5.0 mA )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( I
C
= 10 mA, V
CE
= 5.0 V, f=100 MH
Z
)
Output Capacitance
( V
CB
= 10 V, f=1.0 MH
Z
)
Noise Figure
( V
CE
= 5.0 Vdc, I
C
= 0.2 mA, R
S
= 2.0k ohms, f=1.0 kH
Z, BW = 200
H
Z
)
Symbol
H
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
obo
N
F
Unit
-
V
V
MH
Z
pF
dB
Min.
-
-
-
110
200
420
BC848A
BC848B
BC848C
BC848A
BC848B
BC848C
-
-
-
-
100
-
-
Max.
-
-
-
220
450
800
0.25
0.60
-
-
-
4.5
10
Typ.
90
150
270
180
290
520
-
-
0.7
0.9
Base-Emitter Voltage
( I
C
= 2.0 mA, V
CE
= 5.0 V )
( I
C
= 10 mA, V
CE
= 5.0 V )
V
BE
(on)
mV
580
-
700
770
660
-
-
-
-
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
BC847A,B,C
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
Figure 3. Collector Saturation Region
Figure 4. Base-Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
N
O
R
M
A
L
I
Z
E
D
D
C
C
U
R
R
E
N
T
G
A
I
N
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
I
B
, BASE CURRENT ( mA )
V
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
I
C
, COLLECTOR CURRENT ( mA )
Figure 5. Capacitances
V
R
, REVERSE VOLTAGE ( VOLTS )
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
Figure 6. Current-Gain-Bandwidth Product
I
C
, COLLECTOR CURRENT ( mA )
t
T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(
M
H
Z
)
Figure 2. "Saturation" and "On" Voltage
2.0
0.2
0.5
1.0
10
20
50
0.2
100
2.0
5.0
200
1.5
1.0
0.8
0.6
0.4
0.3
T
A
= 25
o
C
T
A
= 25
o
C
T
A
= 25
o
C
T
A
= 25
o
C
T
A
= 25
o
C
-55
o
C to +125
o
C
V
CE
= 10 V
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
0.2
0.5
1.0
10
20
50
2.0
100
70
30
7.0
5.0
3.0
0.7
0.3
0.1
V
BE(SAT)
@
I
C
/I
B
= 10
V
CE(SAT)
@
I
C
/I
B
= 10
V
BE(on)
@
V
CE
= 10 V
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
I
C
=
1
0
m
A
I
C
=
2
0
m
A
I
C
=
5
0
m
A
I
C
=
1
0
0
m
A
I
C
=
2
0
0
m
A
1.6
1.2
2.0
2.8
2.4
0.2
1.0
10
100
1.0
V
B
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
o
C
)
C
ib
C
ob
V
CE
= 10 V
10
0.4 0.6
1.0
10
20
1.0
2.0
6.0
40
7.0
5.0
3.0
2.0
0.8
4.0
8.0
80
100
200
300
400
60
20
40
30
0.7 1.0
10
20
2.0
50
30
7.0
5.0
3.0
0.5
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
BC847A,B,C
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
(
N
O
R
M
A
L
I
Z
E
D
)
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
I
B
, BASE CURRENT ( mA )
V
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
I
C
, COLLECTOR CURRENT ( mA )
Figure 8. "On" Voltage
T
A
= 25
o
C
T
A
= 25
o
C
T
A
= 25
o
C
-55
o
C to +125
o
C
VB
for V
BE
V
CE
= 10 V
V
BE(SAT)
@
I
C
/I
B
= 10
V
CE(SAT)
@
I
C
/I
B
= 10
V
BE
@
V
CE
= 5.0 V
I
C
=
1
0
m
A
I
C
=
2
0
m
A
I
C
=
5
0
m
A
I
C
=
1
0
0
m
A
I
C
=
2
0
0
m
A
-1.8
-1.4
-2.2
-3.0
-2.6
0.2
1.0
10
200
-1.0
V
B
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
o
C
)
1.0
2.0
0.1
1.0
10
100
0.2
0.2
0.5
0.8
1.0
0.6
0.2
0.4
0.2
1.0
10
200
0
0.5
2.0
5.0
20
50 100
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
0.05
0.2
0.5
2.0
5.0
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