PATENTE
D
EGF30A THRU EGF30M
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
FEATURES
MECHANICAL DATA
* GPRC (Glass Passivated Rectifier Chip) inside
* Glass passivated cavity-free junction
* Ideal for surface mount automotive applications
* Superfast recovery time for high efficiency
* Built-in strain relief
* Easy pick and place
* High temperature soldering guaranteed: 260
o
C/10 seconds,
at terminals
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Case : JEDEC DO-214AA molded plastic over passivated chip
Terminals : Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.004 ounes , 0.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum average forward rectified current T
A
=75
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0 A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
o
C
T
A
=125
o
C
T
A
=150
o
C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
trr
C
J
R
JA
R
JL
T
J
,T
STG
EGF30
A
B
D
F
G
J
M
50
100
200
300
400
600
1000
35
70
140
210
280
420
700
3.0
115
105
1.0
1.25
1.7
5
50
120
5
120
-
50
75
75
47
12
-65 to +175
-55 to +150
UNITS
Volts
Volts
Maximum DC blocking voltage
50
100
200
300
400
600
1000
K
800
560
800
Volts
Volts
Amps
Amps
uA
nS
pF
o
C / W
o
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
Zowie Technology Corporation
REV. : 0
DO-214AA
*Dimensions in inches and (millimeters)
PATENTE
D
PATENTE
D
0.150(3.80)
0.130(3.30)
0.102(2.60)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.016(0.40)
0.006(0.15)
0.187(4.75)
0.167(4.24)
0.083(2.12)
0.077(1.95)
0.236(6.00)
0.197(5.00)
TM
RATINGS AND CHARACTERISTIC CURVES EGF30A THRU EGF30M
Zowie Technology Corporation
REV. : 0
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
A
V
E
R
A
G
E
F
O
R
W
A
R
D
R
E
C
T
I
F
I
E
D
C
U
R
R
E
N
T
,
A
M
P
E
R
E
S
2.0
1.0
1.5
0.5
I
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
A
M
P
E
R
E
S
0.10
1.00
10.00
0.01
0.4
0.2
0.6 0.8
1.0
1.2 1.4
1.8
1.6
0
0
25
50
75
100
125
150
175
RESISTIVE OR
INDUCTIVE LOAD
PULSE WIDTH=300uS
1% DUTY CYCLE
AMBIENT TEMPERATURE,
o
C
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
R
E
N
T
,
A
M
P
E
R
E
S
NUMBER OF CYCLES AT 60Hz
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
40
20
60
120
80
100
1
10
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
I
N
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
L
E
A
K
A
G
E
C
U
R
R
E
N
T
,
M
I
C
R
O
A
M
P
E
R
E
S
0.1
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
I
M
P
E
D
A
N
C
E
(
o
C
/
W
)
0.1
1
10
100
0
20
1
10
100
T
J
=125
o
C
EGF30J~EGF30M
EGF30J~EGF30M
EGF30A~EGF30G
EGF30A~EGF30G
T
J
=150
o
C
40
60
80
100 110
FIG.5 - TYPICAL JUNCTION CAPACITANCE
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
T
J
= 25
o
C
REVERSE VOLTAGE, VOLTS
.1
1
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
p
F
40
200
.2
.4
1.0
2
4
10
20 40
100
t , PULSE DURATION, sec
100
10
1.0
0.10
0.01
2
4
10
6
20
60
100
EGF30J~EGF30M
EGF30A~EGF30F
EGF30G
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