Zowie Technology Corporation
High Voltage Transistor
PNP Silicon
MMBT5401
1
2
1
2
3
3
SOT-23
Rating
Symbol
Value
Unit
Characteristic
Symbol
Min.
Max.
Unit
Collector-Emitter Voltage
V
CEO
-150
Vdc
Collector-Base Voltage
V
CBO
-160
Vdc
Emitter-Base Voltage
V
EBO
-5.0
Vdc
Collector Current-Continuous
I
C
-500
mAdc
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
P
D
225
1.8
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
P
D
V
(BR)CBO
300
2.4
-160
-
mW
mW /
o
C
Thermal Resistance Junction to Ambient
556
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
V
(BR)CEO
-150
-
Vdc
Vdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient
417
o
C / W
R
JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( I
C
= -100 uAdc, I
E
= 0 )
V
(BR)EBO
-5.0
-
Vdc
Emitter-Base Breakdowe Voltage
( I
E
= -10 uAdc, I
C
= 0 )
Collector-Emitter Breakdowe Voltage
( I
C
= 1.0mAdc, I
B
= 0 )
I
CES
-
-
-50
-50
nAdc
uAdc
Collector Cutoff Current
( V
CE
= -120 Vdc, I
E
= 0 )
( V
CE
= -120 Vdc, I
E
= 0, T
A
= 100
o
C )
MMBT5401=2L
-55 to +150
o
C
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
Characteristic
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
H
FE
50
60
50
-
240
-
-
ON CHARACTERISTICS
V
CE
(sat)
Vdc
DC Current Gain
( I
C
= -1.0 mAdc, V
CE
=
-5.0 Vdc )
( I
C
= -10 mAdc, V
CE
= -5.0 Vdc )
( I
C
= -50 mAdc, V
CE
= -5.0 Vdc )
Collector-Emitter Saturation Voltage
( I
C
= -10 mAdc, I
B
= -1.0 mAdc )
( I
C
= -50 mAdc, I
B
= -5.0 mAdc )
-
-
-0.2
-0.5
V
BE
(sat)
Vdc
Base-Emitter Saturation Voltage
( I
C
= -10 mAdc, I
B
= -1.0 mAdc )
( I
C
= -50 mAdc, I
B
= -5.0 mAdc )
-
-
-1.0
-1.0
f
T
C
cb
100
-
300
6.0
MH
Z
SMALL-SIGNAL CHARACTERISTIC
h
fe
-
pF
Current-Gain-Bandwidth Product
( I
C
= -10 mAdc, V
CE
= -10 Vdc, f=100 MH
Z
)
Output Capacitance
( V
CB
= -10 Vdc, I
E
=0, f=1.0 MH
Z
)
Small-Signal Current Gain
( V
CE
= -10 Vdc, I
C
= -1.0 mAdc, f=1.0 MH
Z
)
Noise Figure
( V
CE
= -5.0 Vdc, I
C
= -200 uAdc, R
S
= 10 ohms, f=1.0 kH
Z
)
40
200
N
F
dB
-
8.0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT5401
Figure 2. Collector Saturation Region
Figure 18. Temperature Coefficients
I
C
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
u
A
)
I
B
, BASE CURRENT ( mA )
V
BE
, BASE - EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
h
F
E
,
N
O
R
M
A
L
I
Z
E
D
C
U
R
R
E
N
T
G
A
I
N
30
100
150
200
0.1
0.5
2.0
3.0
10
0.2
0.3
20
1.0
5.0
70
50
20
30
50
100
V
CE = -1.0 V
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 55
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
REVERSE
FORWARD
V
CE = -5.0 V
1.0
0.1
0.5
2.0
10
0.2
1.0
5.0
20
50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
3
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.005
0.01
0.02
0.05
T
J
= 25
o
C
I
C
= 1.0mA
I
C
= 10mA
I
C
= 30mA
I
C
= 100mA
0.1
0.3
0.2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
CE
= 30 V
I
C
= I
CES
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT5401
Figure 4. " On " Voltages
I
C
, COLLECTOR CURRENT ( mA )
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
I
C
, COLLECTOR CURRENT ( mA )
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
VALUES SHOWN ARE FOR IC @ 10 mA
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
V
R
, REVERSE VOLTAGE ( VOLTS )
Figure 8. Turn - On Time
I
C
, COLLECTOR CURRENT ( mA )
t
,
T
I
M
E
(
n
S
)
Figure 9. Turn - Off Time
I
C
, COLLECTOR CURRENT ( mA )
t
,
T
I
M
E
(
n
S
)
Figure 5. Temperature Coefficients
0.3
0.5
0.6
0.9
1.0
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.8
0.7
0.4
0.2
0
0.3
3.0
30
2.5
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
0.3
3.0
30
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
100
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2
0.5
1.0
2.0
5.0
10
20
0.3
3.0
0.7
7.0
1000
100
200
300
500
700
10
20
30
50
70
0.2
0.5
1.0 2.0
5.0
10
20
0.3
3.0
30 50
100
200
2000
100
200
300
500
700
20
30
50
70
0.2
0.5
1.0 2.0
5.0
10
20
0.3
3.0
30 50
100 200
1000
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= -55
o
C to 135
o
C
V
BE(SAT)
@
I
C
/I
B
= 10
V
CE(SAT)
@
I
C
/I
B
= 10
VC
for V
CE
(sat)
VB
for V
BE
(sat)
V
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
S
(
m
V
/
o
C
)
C
ibo
C
obo
I
C
/I
B
= 10
T
J
= 25
o
C
I
C
/I
B
= 10
t
r
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t
f
@ V
CC
= 30 V
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
10.2V
Vin
Vin
10 uS
INPUT PULSE
VBB
+ 8.8V
100
RB
5.1 k
0.25 uF
100
1N914
Vout
RC
VCC
-30 V
3.0 k
tr, tf 10 nS
DUTY CYCLE = 1.0%
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