Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
MMBTA42
1
2
1
2
3
3
SOT-23
Rating
Unit
Characteristic
Collector-Emitter Voltage
Vdc
Collector-Base Voltage
Vdc
Emitter-Base Voltage
Vdc
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
300
300
6.0
500
mAdc
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( I
E
= 100 uAdc, I
C
=0 )
Emitter Cutoff Curretn
( V
EB
= 6.0 Vdc, I
C
=0 )
Collector-Emitter Breakdowe Voltage
(3)
( I
C
= 1.0mAdc, I
B=0
)
Unit
Vdc
Collector-Base Breakdowe Voltage
( I
C
= 100uAdc, I
E=0
)
Vdc
Vdc
uAdc
Collector Cutoff Current
( V
CE
= 200 Vdc, I
E
= 0 )
Symbol
V
(BR)EBO
V
(BR)CEO
I
EBO
V
(BR)CBO
I
CBO
Min.
6.0
300
-
300
-
Max.
-
-
0.1
-
0.1
uAdc
MMBTA42=1D
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW /
o
C
mW
mW /
o
C
o
C / W
o
C / W
o
C
Symbol
P
D
P
D
R
JA
R
JA
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
Characteristic
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
H
FE
25
40
40
-
-
-
-
ON CHARACTERISTICS
(3)
V
CE
(sat)
Vdc
DC Current Gain
( I
C
= 1.0 mAdc, V
CE
=
10 Vdc )
( I
C
= 10 mAdc, V
CE
= 10 Vdc )
( I
C
= 30 mAdc, V
CE
= 10 Vdc )
Collector-Emitter Saturation Voltage
( I
C
= 20 mAdc, I
B
= 2.0 mAdc )
-
0.5
V
BE
(sat)
Vdc
Base-Emitter Saturation Voltage
( I
C
= 20 mAdc, I
B
= 2.0 mAdc )
-
0.9
f
T
C
cb
50
-
-
3.0
MH
Z
SMALL-SIGNAL CHARACTERISTIC
pF
Current-Gain-Bandwidth Product
( I
C
= 10 mAdc, V
CE
= 20 Vdc, f=100 MH
Z
)
Collector-Base Capacitance
( V
CB
= 20 Vdc, I
E
=0, f=1.0 MH
Z
)
Zowie Technology Corporation
REV. : 0
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBTA42
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
D
C
C
U
R
R
E
T
N
G
A
I
N
Figure 2. Capacitance
V
R
, REVERSE VOLTAGE ( VOLTS )
Figure 4. "On" Voltages
I
C
, COLLECTOR CURRENT ( mA )
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
t
T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
(
M
H
z
)
I
C
, COLLECTOR CURRENT ( mA )
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 3. Current-Gain-Bandwidth
T
J
= +125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
CE
= 10 Vdc
V
CE
=20 V
f=20MHz
T
J
= 25
o
C
120
0.1
1.0
10
100
80
60
0
100
20
40
0.1
100
0.1
10
1.0
10
1000
100
1.0
C
eb
@ 1MHz
C
cb
@ 1MHz
100
70
50
30
20
10
7.0
5.0
3.0
2.0
80
70
50
30
20
10
1.0
60
40
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0.1
1.0
V
CE(sat)
@ 25
o
C, I
C
/I
B
= 10
V
CE(sat)
@ 125
o
C, I
C
/I
B
= 10
V
CE(sat)
@ -55
o
C, I
C
/I
B
= 10
V
BE(sat)
@ 25
o
C, I
C
/I
B
= 10
V
BE(sat)
@ 125
o
C, I
C
/I
B
= 10
V
BE(sat)
@ -55
o
C, I
C
/I
B
= 10
V
BE(on)
@ 25
o
C, V
CE
= 10 V
V
BE(on)
@ 125
o
C, V
CE
= 10 V
V
BE(on)
@ -55
o
C, V
CE
= 10 V
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